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Undoped Indium Arsenide Substrate , 4”, Test Grade
Undoped Indium Arsenide Substrate , 4”, Test Grade
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Indium Arsenide InAs Wafer
Wafer Diamter :
4 inch
Conduction Type :
N Type
Grade :
Test Grade
Wafer Thickness :
900±25um
keyword :
Indium Arsenide Wafer
Description

Undoped Indium Arsenide Substrate, 4”, Test Grade

PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

4" InAs Wafer Specification

Item Specifications
Dopant Undoped
Conduction Type N-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 900±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 5x1016cm-3
Mobility ≥2x104cm2/V.s
EPD <5x104cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

What is the InAs Process?

InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Thermal properties of InAs Wafer

Bulk modulus 5.8·1011 dyn cm-2
Melting point 942 °C
Specific heat 0.25 J g-1 °C-1
Thermal conductivity 0.27 W cm-1 °C-1
Thermal diffusivity 0.19 cm2s-1
Thermal expansion, linear 4.52·10-6 °C-1

Undoped Indium Arsenide Substrate , 4”, Test Grade

Temperature dependence of thermal conductivity.
n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017;
p-type sample, po (cm-3): 3. 2.0·1017.
Undoped Indium Arsenide Substrate , 4”, Test Grade Temperature dependences of thermal conductivity for high temperatures
Electron concentration
no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016.
Undoped Indium Arsenide Substrate , 4”, Test Grade Temperature dependence of specific heat at constant pressure

For 298K < T < 1215K

Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).

Undoped Indium Arsenide Substrate , 4”, Test Grade Temperature dependence of linear expansion coefficient
(low temperature)
Undoped Indium Arsenide Substrate , 4”, Test Grade Temperature dependence of linear expansion coefficient
(high temperature)
Undoped Indium Arsenide Substrate , 4”, Test Grade Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect)
Electron concentration at 77K
no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

Are You Looking for an InAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

lgc indium metal

,

gallium arsenide wafer

,

xrf metal analysis
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Undoped Indium Arsenide Substrate , 4”, Test Grade

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
Undoped Indium Arsenide Substrate , 4”, Test Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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