P Type , InAs (Indium Arsenide) Wafer , 4”, Prime Grade

PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

4" InAs Wafer Specification

What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Thermal properties of InAs Wafer

	Temperature dependence of thermal conductivity. n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017; p-type sample, po (cm-3): 3. 2.0·1017.
	Temperature dependences of thermal conductivity for high temperatures Electron concentration no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016.
	Temperature dependence of specific heat at constant pressure

For 298K < T < 1215K

Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).

	Temperature dependence of linear expansion coefficient (low temperature)
	Temperature dependence of linear expansion coefficient (high temperature)
	Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect) Electron concentration at 77K no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

Thermal properties of InAs Wafer

	Temperature dependence of thermal conductivity. n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017; p-type sample, po (cm-3): 3. 2.0·1017.
	Temperature dependences of thermal conductivity for high temperatures Electron concentration no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016.
	Temperature dependence of specific heat at constant pressure

For 298K < T < 1215K

Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).

	Temperature dependence of linear expansion coefficient (low temperature)
	Temperature dependence of linear expansion coefficient (high temperature)
	Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect) Electron concentration at 77K no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

Are You Looking for an InAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!