P Type , Single Crystal InAs Substrate , 3”, Prime Grade

PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 100 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, mechanical grade,test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offers materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

3" InAs Wafer Specification

What is InAs wafer?

Indium arsenide is a kind of III-V compound semiconductor material composed of indium and arsenic.It is a silver gray solid with a sphalerite crystal structure at room temperature. The lattice constant is 0.6058nm, and the density is 5.66g/cm (solid) and 5.90g/cm (liquid at melting point). The band structure is a direct transition with a band gap (300K) of 0.45ev. the dissociation pressure of as is only 0.033mpa, and the single crystal can be grown from the melt at atmospheric pressure. The commonly used methods are Hb and LEC. InAs is a kind of semiconductor material which is difficult to purify. The residual carrier concentration is higher than l × 10 / cm, the room temperature electron mobility is 3.3 × 10 ^ 3cm / (V · s), and the hole mobility is 460cm / (V · s). The effective segregation coefficient of sulfur in In and As is close to 1, so it is used as n-type dopant to improve the uniformity of longitudinal carrier concentration distribution. For industrial InAs (s) single crystal, n ≥ 1 × 10 / cm3, μ ≤ 2.0 × 10cm / (V · s), EPD ≤ 5 × 10 / cm3.

InAs crystal has high electron mobility and mobility ratio (μ E / μ H = 70), low magneto resistance effect and low resistance temperature coefficient. It is an ideal material for manufacturing Hall devices and magneto resistance devices. The emission wavelength of InAs is 3.34 μ M. in GaAs B, InAsPSb and inasb multiple epitaxial materials with lattice matching can be grown on InAs substrate. Lasers and detectors for optical fiber communication at 2-4 μ M band can be manufactured.

What is a InAs test Wafer?

Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

Electrical properties of InAs Wafer

Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different electron concentration: full triangles no= 4·1015 cm-3, circles no= 4·1016cm-3, open triangles no= 1.7·1016cm-3. Solid curve-calculation for pure InAs.
	Electron Hall mobility versus electron concentration. T = 77 K.
	Electron Hall mobility versus electron concentration T = 300 K
	Electron Hall mobility (R·σ) in compensated material Curve n cm-3 Na+Nd cm-3 θ=Na/Nd 1 8.2·1016 3·1017 0.58 2 3.2·1017 6.1·1018 0.9 3 5.1·1016 3.2·1018 0.96 4 3.3·1016 7.5·1017 0.91 5 7.6·1015 3.4·1017 0.95 6 6.4·1015 3.8·1017 0.96 7 3.3·1015 3.9·1017 0.98
	Electron Hall mobility versus transverse magnetic field, T = 77 K. Nd (cm-3): 1. 1.7·1016; 2. 5.8·1016.

At T = 300 K the electron Hall factor in pure n-InAs rH ~1.3.

	Hole Hall mobility (R·σ) versus temperature for different acceptor densities. Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.
	Hall coefficient versus temperature for different acceptor densities. Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.

Transport Properties in High Electric Fields

	Steady state field dependence of the electron drift velocity, 300 K, F || (100). Theoretical calculation
	Field dependence of the electron drift velocity at different transverse magnetic fields for long (microsecond) pulses. Experimental results, 77 K Magnetic field B(T): 1. 0.0; 2. 0.3; 3. 0.9; 4. 1.5.
	Field dependence of the electron drift velocity, 77 K. Solid lines show results of theoretical calculation for different non-parabolicity α (eV-1): 1. 2.85; 2. 2.0; 3. 1.5. Points show experimental results for very short (pico-second pulses)

Impact Ionization

The dependence of ionization rates for electrons αi and holes βi versus 1/F, T =77K

For electrons:

αi = αoexp(-Fno/ F)
αo = 1.8·105 cm-1;
Fno = 1.6·105 V cm-1 (77 K)

For holes:

βi = βoexp(-Fpo/ F)
At 77 K

	Generation rate g versus electric field for relatively low fields, T = 77 K. Solid line shows result of calculation. Experimental results: open and full circles -undoped InAs, open triangles - compensated InAs.
	Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction, 77 K.

Recombination Parameters

Characteristic surface recombination rates (cm s-1) 102 - 104.

Radiative recombination coefficient

Auger coefficient

Are You Looking for an InAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!