PAM-XIAMEN offers Compound Semiconductor InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zinc blende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
Item | Specifications | |||
Dopant | N-type | N-type | P-type | SI-type |
Conduction Type | Undoped | Sulphur | Zinc | lron |
Wafer Diameter | 2" | |||
Wafer Orientation | (100)±0.5° | |||
Wafer Thickness | 350±25um | |||
Primary Flat Length | 16±2mm | |||
Secondary Flat Length | 8±1mm | |||
Carrier Concentration | 3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70x103cm2/V.s | >1000cm2/V.s |
Resistivity | N/A | N/A | N/A | N/A |
EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
TTV | <10um | |||
BOW | <10um | |||
WARP | <12um | |||
Laser marking | upon request | |||
Suface finish | P/E, P/P | |||
Epi ready | yes | |||
Package | Single wafer container or cassette |
3" InP Wafer Specification
Item | Specifications | |||
Dopant | N-type | N-type | P-type | SI-type |
Conduction Type | Undoped | Sulphur | Zinc | lron |
Wafer Diameter | 3" | |||
Wafer Orientation | (100)±0.5° | |||
Wafer Thickness | 600±25um | |||
Primary Flat Length | 16±2mm | |||
Secondary Flat Length | 8±1mm | |||
Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70x103cm2/V.s | >1000cm2/V.s |
Resistivity | N/A | N/A | N/A | N/A |
EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
TTV | <12um | |||
BOW | <12um | |||
WARP | <15um | |||
Laser marking | upon request | |||
Suface finish | P/E, P/P | |||
Epi ready | yes | |||
Package | Single wafer container or cassette |
Item | Specifications | |||
Dopant | N-type | N-type | P-type | SI-type |
Conduction Type | Undoped | Sulphur | Zinc | lron |
Wafer Diameter | 4" | |||
Wafer Orientation | (100)±0.5° | |||
Wafer Thickness | 600±25um | |||
Primary Flat Length | 16±2mm | |||
Secondary Flat Length | 8±1mm | |||
Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70x103cm2/V.s | >1000cm2/V.s |
Resistivity | N/A | N/A | N/A | N/A |
EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
TTV | <15um | |||
BOW | <15um | |||
WARP | <15um | |||
Laser marking | upon request | |||
Suface finish | P/E, P/P | |||
Epi ready | yes | |||
Package | Single wafer container or cassette |