Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Delivery Time :
10,000 wafers/month
Description
Mechanical Grade InP Wafer , n Type , p Type Or Semi-Insulating In Orientation(100) Or (111)

PAM-XIAMEN offers Compound Semiconductor InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zinc blende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

Here is the detail specification:
2"(50.8mm)InP Wafer Specification
3"(76.2mm)Inp Wafer Specification
4"(100mm) InP Wafer Specificatio
2" InP Wafer Specification
Item Specifications
Dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 2"
Wafer Orientation (100)±0.5°
Wafer Thickness 350±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70x103cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <10um
BOW <10um
WARP <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette


3" InP Wafer Specification

Item Specifications
Dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70x103cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

4" InP Wafer Specification
Item Specifications
Dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70x103cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <15um
BOW <15um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette
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Prime / Mechanical Grade InP Wafer , n Type , p Type Or Semi-Insulating In Orientation(100) Or (111)

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Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Delivery Time :
10,000 wafers/month
Contact Supplier
Prime / Mechanical Grade InP Wafer , n Type , p Type Or Semi-Insulating In Orientation(100) Or (111)

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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