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2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure
2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Item :
PAM-FS-GAN-50-N
product name :
Gallium Nitride substrate Wafer
Conduction Type :
N-type
Dimension :
50.8 ±1 mm
Thickness :
350 ±25 μm 430±25μm
other name :
GaN Wafer
Description

2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure

PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.

PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity,crystallineGaN&AlN templates, and custom III-N epiwafers.

Here shows detail specification:

2inch Freestanding N-GaN GaN Substrates

Item PAM-FS-GaN-50-N
Dimension 50.8 ±1 mm
Thickness 350 ±25 μm 430±25μm
Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15°
Orientation Flat (1-100) 0 ±0.5°, 16 ±1 mm
Secondary Orientation Flat (11-20) 0 ±3°, 8 ±1 mm
Conduction Type N-type
Resistivity (300K)

>106 Ω·cm
TTV < 0.05 Ω·cm
BOW -20 μm ≤ BOW ≤ 20 μm
Surface Roughness:

Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density From 1 x 105 to 5 x 10 6cm -2(calculated by CL)*
Macro Defect Density < 2 cm-2
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

2inch Freestanding N-GaN GaN Substrates

The growing demand for high-speed, high-temperature and high power-handling capabilities has made the semiconductor industry rethink the choice of materials used as semiconductors. For instance, as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, the properties of silicon are no longer sufficient to allow further improvements in conversion efficiency.

Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), Gallium Nitride (or GaN) is the unique material of choice to solve energy problems of the future. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.

Transmitance-GaN material-TEST REPORT

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.

The transmittance of the wafer surface is the effectiveness of its transmission of radiative energy. Compared with the transmission coefficient, it is the fraction of the incident electromagnetic power transmitted through the sample, and the transmission coefficient is the ratio of the transmitted electric field to the incident electric field.

2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure

Transmitance of GaN material

Product tags

led pcb layout

,

fr4 pcb for led

,

led pcb assembly
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2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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