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Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld
Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Description

Freestanding GaN Substrate, N Type, Semi-Insulating For Rf,Power,Led And Ld

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.

Specification of Freestanding GaN substrate

Here shows detail specification:

2″(50.8mm)Free-standing (gallium nitride) GaN Substrate

Item PAM-FS-GaN50-N PAM-FS-GaN50-SI
Conduction Type N-type Semi-insulating
Size 2″(50.8)+/-1mm
Thickness 330-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length 16+/-1mm
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.5Ω·cm >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld

1.5″(38.1mm)Free-standing GaN Substrate

Item PAM-FS-GaN38-N PAM-FS-GaN38-SI
Conduction Type N-type Semi-insulating
Size 1.5″(38.1)+/-0.5mm
Thickness 330-450um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (1-100)+/-0.5o
Primary Flat Length 12+/-1mm
Secondary Flat Location (11-20)+/-3o
Secondary Flat Length 6+/-1mm
Resistivity(300K) <0.5Ω·cm >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished

Back Surface:1.Fine ground

2.Rough grinded
Usable Area ≥ 90 %

Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld

15mm,10mm,5mm Free-standing GaN Substrate

Item

PAM-FS-GaN15-N

PAM-FS-GaN10-N

PAM-FS-GaN5-N

PAM-FS-GaN15-SI

PAM-FS-GaN10-SI

PAM-FS-GaN5-SI
Conduction Type N-type Semi-insulating
Size 14.0mm*15mm 10.0mm*10.5mm 5.0*5.5mm
Thickness 330-450um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location
Primary Flat Length
Secondary Flat Location
Secondary Flat Length
Resistivity(300K) <0.5Ω·cm >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density 0cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld

Note:

Validation Wafer:Considering convenience of usage, PAM-XIAMEN offer 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

Application of GaN Substrate

Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting

DVD Storage: Blue laser diodes

Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Ideal for III-Nitrides re-growth

Wireless Base Stations: RF power transistors

Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs

Pressure Sensors:MEMS

Heat Sensors: Pyro-electric detectors

Power Conditioning: Mixed signal GaN/Si Integration

Automotive Electronics: High temperature electronics

Power Transmission Lines: High voltage electronics

Frame Sensors: UV detectors

Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.

Ideal for HEMTs, FETs

GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.
Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.
We will offer test reports, please see below an example:
Surface Roughness-GaN material-TEST REPORT
Transmitance-GaN material-TEST REPORT
XRD Rocking Curves-GaN Material-TEST REPORT
Product tags

wipro dimmable led panels

,

led emitting diode rectangular

,

aluminum base led mcpcb
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Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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