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(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate
(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Item :
PAM-FS-GAN(10-11)-U
product name :
U-GaN Freestanding GaN Substrate
Conduction Type :
N type
Dimension :
5 x 10 mm2
Thickness :
350 ±25 μm 430±25μm
other name :
GaN Wafer
Description

(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.

PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity,crystallineGaN&AlN templates, and custom III-N epiwafers.

Here Shows Detail Specification:

(10-11) Plane U-GaN Freestanding GaN Substrate

Item PAM-FS-GaN(10-11)-U
Dimension 5 x 10 mm2
Thickness 350 ±25 µm 430 ±25 µm
Orientation

(10-11) plane off angle toward A-axis 0 ±0.5°

(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type N-type
Resistivity (300K) < 0.1 Ω·cm
TTV ≤ 10 µm
BOW -10 µm ≤ BOW ≤ 10 µm
Surface Roughness

Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density From 1 x 10 5to 5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

Application of GaN Substrate

Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting

DVD Storage: Blue laser diodes

Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Wireless Base Stations: RF power transistors

Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs

Pressure Sensors:MEMS

Heat Sensors: Pyro-electric detectors

Power Conditioning: Mixed signal GaN/Si Integration

Automotive Electronics: High temperature electronics

Power Transmission Lines: High voltage electronics

Frame Sensors: UV detectors

Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.

Ideal for HEMTs, FETs

GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.

Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.

Lattice constant of GaN substrate

Lattice parameters of gallium nitride were measured using high‐resolution x‐ray diffraction

(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate

GaN,Wurtzite sructure. The lattice constants a vs. temperature.

(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate

GaN,Wurtzite sructure. The lattice constants c vs. Temperature

Properties of GaN substrate

PROPERTY / MATERIAL Cubic (Beta) GaN Hexagonal (Alpha) GaN
Structure Zinc Blende Wurzite
Space Group F bar4 3m C46v ( = P63mc)
Stability Meta-stable Stable
Lattice Parameter(s) at 300K 0.450 nm a0 = 0.3189 nm
c0 = 0.5185 nm
Density at 300K 6.10 g.cm-3 6.095 g.cm-3
Elastic Moduli at 300 K . . . . . .
Linear Thermal Expansion Coeff.
at 300 K		 . . . Along a0: 5.59x10-6 K-1
Along c0: 7.75x10-6 K-1
Calculated Spontaneous Polarisations Not Applicable – 0.029 C m-2
Bernardini et al 1997
Bernardini & Fiorentini 1999
Calculated Piezo-electric Coefficients Not Applicable e33 = + 0.73 C m-2
e31 = – 0.49 C m-2
Bernardini et al 1997
Bernardini & Fiorentini 1999
Phonon Energies TO: 68.9 meV　
LO: 91.8 meV		 A1(TO): 66.1 meV
E1(TO): 69.6 meV
E2: 70.7 meV
A1(LO): 91.2 meV
E1(LO): 92.1 meV
Debye Temperature 　 600K (estimated)
Slack, 1973　
Thermal Conductivity
near 300K		 . . . Units: Wcm-1K-1

1.3,
Tansley et al 1997b

2.2±0.2
for thick, free-standing GaN
Vaudo et al, 2000

2.1 (0.5)
for LEO material
where few (many) dislocations
Florescu et al, 2000, 2001

circa 1.7 to 1.0
for n=1x1017 to 4x1018cm-3
in HVPE material
Florescu, Molnar et al, 2000

2.3 ± 0.1
in Fe-doped HVPE material
of ca. 2 x108 ohm-cm,
& dislocation density ca. 105 cm-2
(effects of T & dislocation density also given).
Mion et al, 2006a, 2006b
Melting Point . . . . . .
Dielectric Constant
at Low/Lowish Frequency		 . . . Along a0: 10.4
Along c0: 9.5
Refractive Index 2.9 at 3eV
Tansley et al 1997b		 2.67 at 3.38eV
Tansley et al 1997b
Nature of Energy Gap Eg Direct Direct
Energy Gap Eg at 1237K 　 2.73 eV
Ching-Hua Su et al, 2002
Energy Gap Eg at 293-1237 K 　 3.556 - 9.9x10-4T2 / (T+600) eV
Ching-Hua Su et al, 2002
Energy Gap Eg at 300 K 3.23 eV
Ramirez-Flores et al 1994
.
3.25 eV
Logothetidis et al 1994		 3.44 eV
Monemar 1974
.
3.45 eV
Koide et al 1987
.
3.457 eV
Ching-Hua Su et al, 2002
Energy Gap Eg at ca. 0 K 3.30 eV
Ramirez-Flores et al1994
Ploog et al 1995		 3.50 eV
Dingle et al 1971
Monemar 1974
Intrinsic Carrier Conc. at 300 K . . . . . .
Ionisation Energy of . . . Donor . . . . . . . .
Electron effective mass me* / m0 . . . 0.22
Moore et al, 2002
Electron Mobility at 300 K
for n = 1x1017 cm-3:
for n = 1x1018 cm-3:
for n = 1x1019 cm-3:		 . . . ca. 500 cm2V-1s-1
ca. 240 cm2V-1s-1
ca. 150 cm2V-1s-1

Rode & Gaskill, 1995
Tansley et al 1997a
Electron Mobility at 77 K
for n = . .		 . . . . . . . .
Ionisation Energy of Acceptors . . . Mg: 160 meV
Amano et al 1990

Mg: 171 meV
Zolper et al 1995

Ca: 169 meV
Zolper et al 1996
Hole Hall Mobility at 300 K
for p= . . .		 . . . . . . .
Hole Hall Mobility at 77 K
for p= . . .		 . . . . . . .
. Cubic (Beta) GaN Hexagonal (Alpha) GaN

Application of GaN substrate

Gallium nitride (GaN), with a direct band gap of 3.4 eV, is a promising material in the development of short-wavelength light emitting devices. Other optical device applications for GaN include semiconductor lasers and optical detectors.

Product tags

gaas substrate

,

fr4 substrate for boards

,

fr4 single layer pcb
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(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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