P Type , GaAs(Gallium Arsenide) Substrate With Low EPD , 3”, Prime Grade

PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-resistance (>10^7 ohm.cm) or low-resistance (<10 - 2 ohm.cm) semiconductors. The wafer surfaces are generally epi-ready (extremely low contamination) i.e. their quality is suitable for direct use in epitaxial processes.

(GaAs)Gallium Arsenide Wafers for LED Applications

Properties of GaAs Crystal

FAQ:

Question:We are looking for:

2” GaAs test substrate
p-C doped ( > 5x10^19 ).
Qty: 5~10pcs
Kindly quote your best price and lead-time.

Answer:For p type, constant doping concentration of GaAs substrate should be (1-6)E19, can not be adjusted, and it should be Mg doped rather than C doped.

What is GaAs wafer?

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.

GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.

What is the Optical properties of GaAs Wafer?

Infrared refractive index

n = k1/2 = 3.255·(1 + 4.5·10-5T)
for 300 K n= 3.299

Long-wave TO phonon energy

hνTO = 33.81·(1 - 5.5·10-5 T) (meV)
for 300 K hνTO = 33.2 meV

Long-wave LO phonon energy

hνLO= 36.57·(1 - 4·10-5 T) (meV)
for 300 K hνLO = 36.1 meV

	Refractive index n versus photon energy for a high-purity GaAs.(no~5·1013 cm-3). Solid curve is deduced from two-beam reflectance measurements at 279 K. Dark circles are obtained from refraction measurements. Light circles are calculated from Kramers-Kronig analysis
	Normal incidence reflectivity versus photon energy. .
	Intrinsic absorption coefficient near the intrinsic absorption edge for different temperatures.

A ground state Rydberg energy RX1= 4.2 meV

	Intrinsic absorption edge at 297 K at different doping levels. n-type doping
	Intrinsic absorption edge at 297 K at different doping levels. p-type doping
	The absorption coefficient versus photon energy from intrinsic edge to 25 eV.
	Free carrier absorption versus wavelength at different doping levels, 296 K Conduction electron concentrations are: 1. 1.3·1017cm-3; 2. 4.9·1017cm-3; 3. 1018cm-3; 4. 5.4·1018cm-3
	Free carrier absorption versus wavelength at different temperatures. no = 4.9·1017cm-3 Temperatures are: 1. 100 K; 2. 297 K; 3. 443 K.

At 300 K

For λ~2 µm α=6·10-18 no (cm-1) (no - in cm-1)
For λ > 4µm and 1017<no<1018cm-3α ≈ 7.5·10-20no·λ3 (cm-1) (no - in cm-3, λ - µm)

Are You Looking for GaAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!