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P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing
P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
P Type GaAs Substrate Wafer
Wafer Diamter :
3 inch
Conduction Type :
SC/p-type with Zn dope Available
Grade :
Dummy Grade
usage :
LED Application
keyword :
GaAs wafer
Description

P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications
Conduction Type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Mg
Wafer Diamter 3, inch
Crystal Orientation (100)2°/6°/15° off (110)
OF EJ or US
Carrier Concentration E19
Resistivity at RT —
Mobility

1500~3000cm2/V.sec
Etch Pit Density <5000/cm2
Laser Marking

upon request
Surface Finish

P/E or P/P
Thickness

220~450um
Epitaxy Ready Yes
Package Single wafer container or cassette

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C
Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

What is the Thermal properties of GaAs Wafer?

Bulk modulus 7.53·1011 dyn cm-2
Melting point 1240 °C
Specific heat 0.33 J g-1°C -1
Thermal conductivity 0.55 W cm-1 °C -1
Thermal diffusivity 0.31cm2s-1
Thermal expansion, linear 5.73·10-6 °C -1

P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing Temperature dependence of thermal conductivity
n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018;
p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing Temperature dependence of thermal conductivity (for high temperature)
n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018;
p-type sample, po (cm-3): 5. 6·1019.
P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1.
N is the number of atoms in 1 g og GaAs.
Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing Temperature dependence of linear expansion coefficient α

Melting point Tm=1513 K
For 0 < P < 45 kbar Tm= 1513 - 3.5P (P in kbar)
Saturated vapor pressure (in Pascals)
1173 K 1
1323 K 100

Are You Looking for GaAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

semiconductor wafer

,

semiconductor wafer fabrication

,

wafer semiconductor
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P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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