MachineU > China Products > Minerals & Metallurgy > Non-ferrous Metal > Ingots > Silicon Ingots
4H High Purity Semi Insulating SiC Wafer , Research Grade , Epi Ready , 2”Size
4H High Purity Semi Insulating SiC Wafer , Research Grade , Epi Ready , 2”Size
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
name :
Semi Insulating Silicon Carbide Wafer
Grade :
Dummy Grade
Description :
High Purity Silicon Carbide Wafer
Carrier Type :
Epi Ready
Diameter :
(50.8 ± 0.38) mm
Thickness :
(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Description

4H High Purity Semi Insulating SiC Wafer , Research Grade , Epi Ready , 2”Size

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.

Here shows detail specification:

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

4H High Purity Semi Insulating Silicon Carbide Wafer, Dummy Grade,Epi Ready,2”Size

SUBSTRATE PROPERTY S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
Description

Research Grade4H SEMI Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

Property Value Conditions
Density 3217 kg/m^3 hexagonal
Density 3210 kg/m^3 cubic
Density 3200 kg/m^3 Single crystal
Hardness,Knoop(KH) 2960 kg/mm/mm 100g,Ceramic,black
Hardness,Knoop(KH) 2745 kg/mm/mm 100g,Ceramic,green
Hardness,Knoop(KH) 2480 kg/mm/mm Single crystal.
Young's Modulus 700 GPa Single crystal.
Young's Modulus 410.47 GPa Ceramic,density=3120 kg/m/m/m, at room temperature
Young's Modulus 401.38 GPa Ceramic,density=3128 kg/m/m/m, at room temperature
Thermal conductivity 350 W/m/K Single crystal.
Yield strength 21 GPa Single crystal.
Heat capacity 1.46 J/mol/K Ceramic,at temp=1550 C.
Heat capacity 1.38 J/mol/K Ceramic,at temp=1350 C.
Heat capacity 1.34 J/mol/K Ceramic,at temp=1200 C.
Heat capacity 1.25 J/mol/K Ceramic,at temp=1000 C.
Heat capacity 1.13 J/mol/K Ceramic,at temp=700 C.
Heat capacity 1.09 J/mol/K Ceramic,at temp=540 C.
Electrical resistivity 1 .. 1e+10 Ω*m Ceramic,at temp=20 C
Compressive strength 0.5655 .. 1.3793 GPa Ceramic,at temp=25 C
Modulus of Rupture 0.2897 GPa Ceramic,with 1 wt% B addictive
Modulus of Rupture 0.1862 GPa Ceramifc,at room temperature
Poisson's Ratio 0.183 .. 0.192 Ceramic,at room temperature,density=3128 kg/m/m/m
Modulus of Rupture 0.1724 GPa Ceramic,at temp=1300 C
Modulus of Rupture 0.1034 GPa Ceramic,at temp=1800 C
Modulus of Rupture 0.07586 GPa Ceramic,at temp=1400 C
Tensile strength 0.03448 .. 0.1379 GPa Ceramic,at temp=25 C

*Reference:CRC Materials Science and Engineering Handbook

Comparision of Property of single crystal SiC, 6H and 4H:

Property Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

*Reference:Xiamen Powerway Advanced Material Co.,Ltd.

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:

Si-C Polytype 3C-SiC 4H-SiC 6H-SiC
Crystal structure Zinc blende (cubic) Wurtzite ( Hexagonal) Wurtzite ( Hexagonal)
Group of symmetry T2d-F43m C46v-P63mc C46v-P63mc
Bulk modulus 2.5 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2
Linear thermal expansion coefficient 2.77 (42) x 10-6 K-1 　 　
Debye temperature 1200 K 1300 K 1200 K
Melting point 3103 (40) K 3103 ± 40 K 3103 ± 40 K
Density 3.166 g cm-3 3.21 g cm-3 3.211 g cm-3
Hardness 9.2-9.3 9.2-9.3 9.2-9.3
Surface microhardness 2900-3100 kg mm-2 2900-3100 kg mm-2 2900-3100 kg mm-2
Dielectric constant (static) ε0 ~= 9.72 The value of 6H-SiC dielectric constant is usually used ε0,ort ~= 9.66
Infrared refractive index ~=2.55 ~=2.55 (c axis) ~=2.55 (c axis)
Refractive index n(λ) n(λ)~= 2.55378 + 3.417 x 104·λ-2 n0(λ)~= 2.5610 + 3.4 x 104·λ-2 n0(λ)~= 2.55531 + 3.34 x 104·λ-2
ne(λ)~= 2.6041 + 3.75 x 104·λ-2 ne(λ)~= 2.5852 + 3.68 x 104·λ-2
Radiative recombination coefficient 1.5 x 10-12 cm3/s 1.5 x 10-12 cm3/s
Optical photon energy 102.8 meV 104.2 meV 104.2 meV
Effective electron mass (longitudinal)ml 0.68mo 0.677(15)mo 0.29mo
Effective electron mass (transverse)mt 0.25mo 0.247(11)mo 0.42mo
Effective mass of density of states mcd 0.72mo 0.77mo 2.34mo
Effective mass of the density of states in one valley of conduction band mc 0.35mo 0.37mo 0.71mo
Effective mass of conductivity mcc 0.32mo 0.36mo 0.57mo
Effective hall mass of density of state mv? 0.6 mo ~1.0 mo ~1.0 mo
Lattice constant a=4.3596 A a = 3.0730 A a = 3.0730 A
b = 10.053 b = 10.053

* Reference: IOFFE

SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim

Introduction

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed
for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions
is expected to enable significant improvements to a far-ranging variety of applications and systems.
These range from greatly improved high-voltage switching for energy savings in public electric power
distribution and electric motor drives to more powerful microwave electronics for radar and communications
to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile
engines. In the particular area of power devices, theoretical appraisals have indicated that SiC
power MOSFET’s and diode rectifiers would operate over higher voltage and temperature ranges, have
superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly
rated silicon-based devices. However, these tremendous theoretical advantages have yet to be widely
realized in commercially available SiC devices, primarily owing to the fact that SiC’s relatively immature
crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required
for reliable incorporation into most electronic systems.
This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences
(both good and bad) between SiC electronics technology and the well-known silicon VLSI technology
are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale
applications. Key crystal growth and device-fabrication issues that presently limit the performance and
capability of high-temperature and high-power SiC electronics are identified.

Product tags

aluminium section 6063 properties

,

aluminium housing profiles

,

silicon carbide refractory properties
Send your message to this supplier
Send Now

4H High Purity Semi Insulating SiC Wafer , Research Grade , Epi Ready , 2”Size

Ask Latest Price
Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
4H High Purity Semi Insulating SiC Wafer , Research Grade , Epi Ready , 2”Size

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products SiC Wafer
MachineU China Products Minerals & Metallurgy Non-ferrous Metal Ingots Silicon Ingots
Contact Supplier
Submit Requirement