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3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth
3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
name :
Semi Insulating SIC Wafer
Description :
4H Semi Insulating SIC Wafer
grade :
Research Grade
Size :
3”Size
keywords :
single crystal SiC wafer
application :
optoelectronic industry
Description

3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

Epitaxial growth of graphene on silicon carbide (SiC)

I. To fabricate and test electronic devices made from graphene on silicon carbide (SiC) substrates, it needs high-quality graphene to be processed. And to get qualified graphene, it needs qualified SiC substrate.

II. If the required wafers will be used to fabricate high-quality epitaxial graphene by annealing small sections of the wafer in Argon gas background, the quality of the wafers is critical, as are the surface finish (chemical-mechanical epitaxial grade polish) and miscut relative to the basal crystal plane of 4H-SiC(0001).
III. 100 mm diameter SiC substrates with the following technical requirements:

2. 100% Semi-insulating SiC wafers of 100 mm diameter with minimum crystal defects

3. 100% high-purity on-axis type single-crystal 4H-SiC(0001) with no intentional doping.

4. Surface oriented parallel to the (0001) crystal plane to within 0.10 degree.

5. SiC(0001) surface is Epi-Ready polished substrate on which graphene can be grown.

6. Wafer bow is less than 25 micrometers for each wafer.

Please contact us for more information:

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

4H Semi-Insulating SiC Wafer, Research Grade,3”Size

SUBSTRATE PROPERTY S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
Description Research Grade 4H SEMI Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

Product tags

silicon carbide refractory properties

,

anodized aluminum profiles

,

silicon carbide crucible sizes
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3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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