MachineU > China Products > Toys & Hobbies > Educational Toys > Sicence & Engineering Toys
4H Semi-Insulating SiC Wafer, Production Grade,3”Size
4H Semi-Insulating SiC Wafer, Production Grade,3”Size
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
name :
semiconductor silicon carbide wafer
Description :
4H SEMI Substrate
grade :
Production Grade
Size :
3”Size
keywords :
SiC wafer
Description

4H Semi-Insulating SiC Wafer, Production Grade,3”Size

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.

Here shows detail specification:

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

4H Semi-Insulating SiC Wafer, Production Grade,3”Size

SUBSTRATE PROPERTY S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
Description Production Grade 4H SEMI Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <30 arcsec <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

Property Value Conditions
Density 3217 kg/m^3 hexagonal
Density 3210 kg/m^3 cubic
Density 3200 kg/m^3 Single crystal
Hardness,Knoop(KH) 2960 kg/mm/mm 100g,Ceramic,black
Hardness,Knoop(KH) 2745 kg/mm/mm 100g,Ceramic,green
Hardness,Knoop(KH) 2480 kg/mm/mm Single crystal.
Young's Modulus 700 GPa Single crystal.
Young's Modulus 410.47 GPa Ceramic,density=3120 kg/m/m/m, at room temperature
Young's Modulus 401.38 GPa Ceramic,density=3128 kg/m/m/m, at room temperature
Thermal conductivity 350 W/m/K Single crystal.
Yield strength 21 GPa Single crystal.
Heat capacity 1.46 J/mol/K Ceramic,at temp=1550 C.
Heat capacity 1.38 J/mol/K Ceramic,at temp=1350 C.
Heat capacity 1.34 J/mol/K Ceramic,at temp=1200 C.
Heat capacity 1.25 J/mol/K Ceramic,at temp=1000 C.
Heat capacity 1.13 J/mol/K Ceramic,at temp=700 C.
Heat capacity 1.09 J/mol/K Ceramic,at temp=540 C.
Electrical resistivity 1 .. 1e+10 Ω*m Ceramic,at temp=20 C
Compressive strength 0.5655 .. 1.3793 GPa Ceramic,at temp=25 C
Modulus of Rupture 0.2897 GPa Ceramic,with 1 wt% B addictive
Modulus of Rupture 0.1862 GPa Ceramifc,at room temperature
Poisson's Ratio 0.183 .. 0.192 Ceramic,at room temperature,density=3128 kg/m/m/m
Modulus of Rupture 0.1724 GPa Ceramic,at temp=1300 C
Modulus of Rupture 0.1034 GPa Ceramic,at temp=1800 C
Modulus of Rupture 0.07586 GPa Ceramic,at temp=1400 C
Tensile strength 0.03448 .. 0.1379 GPa Ceramic,at temp=25 C

* Reference:CRC Materials Science and Engineering Handbook

Comparision of Property of single crystal SiC, 6H and 4H:

Property Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

* Reference:Xiamen Powerway Advanced Material Co.,Ltd.

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:

Si-C Polytype 3C-SiC 4H-SiC 6H-SiC
Crystal structure Zinc blende (cubic) Wurtzite ( Hexagonal) Wurtzite ( Hexagonal)
Group of symmetry T2d-F43m C46v-P63mc C46v-P63mc
Bulk modulus 2.5 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2
Linear thermal expansion coefficient 2.77 (42) x 10-6 K-1 　 　
Debye temperature 1200 K 1300 K 1200 K
Melting point 3103 (40) K 3103 ± 40 K 3103 ± 40 K
Density 3.166 g cm-3 3.21 g cm-3 3.211 g cm-3
Hardness 9.2-9.3 9.2-9.3 9.2-9.3
Surface microhardness 2900-3100 kg mm-2 2900-3100 kg mm-2 2900-3100 kg mm-2
Dielectric constant (static) ε0 ~= 9.72 The value of 6H-SiC dielectric constant is usually used ε0,ort ~= 9.66
Infrared refractive index ~=2.55 ~=2.55 (c axis) ~=2.55 (c axis)
Refractive index n(λ) n(λ)~= 2.55378 + 3.417 x 104·λ-2 n0(λ)~= 2.5610 + 3.4 x 104·λ-2 n0(λ)~= 2.55531 + 3.34 x 104·λ-2
ne(λ)~= 2.6041 + 3.75 x 104·λ-2 ne(λ)~= 2.5852 + 3.68 x 104·λ-2
Radiative recombination coefficient 1.5 x 10-12 cm3/s 1.5 x 10-12 cm3/s
Optical photon energy 102.8 meV 104.2 meV 104.2 meV
Effective electron mass (longitudinal)ml 0.68mo 0.677(15)mo 0.29mo
Effective electron mass (transverse)mt 0.25mo 0.247(11)mo 0.42mo
Effective mass of density of states mcd 0.72mo 0.77mo 2.34mo
Effective mass of the density of states in one valley of conduction band mc 0.35mo 0.37mo 0.71mo
Effective mass of conductivity mcc 0.32mo 0.36mo 0.57mo
Effective hall mass of density of state mv? 0.6 mo ~1.0 mo ~1.0 mo
Lattice constant a=4.3596 A a = 3.0730 A a = 3.0730 A
b = 10.053 b = 10.053

* Reference: IOFFE

SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim

SiC Semiconductor Crystal Growth

As of this writing, much of the outstanding theoretical promise of SiC electronics highlighted in theprevious section has largely gone unrealized. A brief historical examination quickly shows that seriousshortcomings in SiC semiconductor material manufacturability and quality have greatly hindered thedevelopment of SiC semiconductor electronics. From a simple-minded point of view, SiC electronicsdevelopment has very much followed the general rule of thumb that a solid-state electronic device canonly be as good as the semiconductor material from which it is made.

Product tags

silicon carbide wafer

,

aluminum composite panel specifications

,

silicon carbide refractory properties
Send your message to this supplier
Send Now

4H Semi-Insulating SiC Wafer, Production Grade,3”Size

Ask Latest Price
Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
4H Semi-Insulating SiC Wafer, Production Grade,3”Size

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products SiC Wafer
MachineU China Products Toys & Hobbies Educational Toys Sicence & Engineering Toys
Contact Supplier
Submit Requirement