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4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size
4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
name :
4H N Type SIC Wafer
Grade :
Research Grade
Description :
SIC Wafer
Carrier Type :
N Type
Diameter :
(50.8 ± 0.38) mm
Thickness :
(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Description

4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size​

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available. Please contact us for more information.

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

4H N Type SiC Wafer, Research Grade,Epi Ready,2”Size

SUBSTRATE PROPERTY S4H-51-N-PWAM-330 S4H-51-N-PWAM-430
Description Research Grade 4H SiC Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.012 – 0.0028 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70) mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

sic crystal defects

Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.

Refraction Index:


In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium.

Refractive index of materials varies with the wavelength. This is called dispersion; it causes the splitting of white light in prisms and rainbows, and chromatic aberration in lenses. Inopaque media, the refractive index is a complex number: while the real part describes refraction, the imaginary part accounts for absorption.

The concept of refractive index is widely used within the full electromagnetic spectrum, from x-rays to radio waves. It can also be used with wave phenomena other than light (e.g.,sound). In this case the speed of sound is used instead of that of light and a reference medium other than vacuum must be chosen.

For infrared light refractive indices can be considerably higher. Germanium is transparent in a wavelength of 589 nanometers and has a refractive index of about 4, making it an important material for infrared optics.

SiC refraction index: 2.55 (infrared; all polytypes)

Product tags

silicon carbide wafer

,

sic wafer

,

structure of silicon carbide
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4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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