MachineU > China Products > Tools & Hardware > Drill Bits > CarbideTipped Router Bits
4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer
4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
name :
SIC As-Cut Wafer
type :
N Type
Description :
4H N Type SIC As-Cut Wafer, 2”Size
keywords :
single crystal SiC
Description

4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

Please contact us for more information:

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

4H N Type SC As-Cut Wafer, 2”Size

2" 4H Silicon Carbide
Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area
　 N-Type
S4H-51-N-SIC-330-A 2" 4H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90%
S4H-51-N-SIC-330-B 2" 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85%
S4H-51-N-SIC-330-D 2" 4H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75%
S4H-51-N-SIC-370-L 2" 4H-N 0°/4°±0.5° 370±25um D * L/L >75%
S4H-51-N-SIC-410-AC 2" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75%
S4H-51-N-SIC-C0510-AC-D 2" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut *
S4H-51-N-SIC-C1015-AC-D 2" 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut *
S4H-51-N-SIC-C0510-AC-C 2" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut *
S4H-51-N-SIC-C1015-AC-C 2" 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut *

SiC crystal growth

Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.

Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in Table 5.1. Much more
detailed electrical properties can be found in References 11–13 and references therein. Even within a
given polytype, some important electrical properties are nonisotropic, in that they are strong functions
of crystallographic direction of current flow and applied electric field (for example, electron mobility
for 6H-SiC). Dopant impurities in SiC can incorporate into energetically inequivalent sites. While all
dopant ionization energies associated with various dopant incorporation sites should normally be
considered for utmost accuracy, Table 5.1 lists only the shallowest reported ionization energies of each
impurity

4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer

4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer

Product tags

silicon carbide wafer

,

silicon carbide structure

,

sic wafer
Send your message to this supplier
Send Now

4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer

Ask Latest Price
Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products SiC Wafer
MachineU China Products Tools & Hardware Drill Bits CarbideTipped Router Bits
Contact Supplier
Submit Requirement