4H N Type SiC Crystal Wafer With Low Micropipe Density,2”Size

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

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SILICON CARBIDE MATERIAL PROPERTIES

4H N Type SiC Lapping Wafer, 2”Size

What is the Main Defects During Growth of SiC Crystal Wafer?

There are five main defects during growth of SiC ingots:

1. Stacking fault
2 Micropipe defects
3 Through screw dislocation(TSD)
4 Through edge dislocation(TED)
5.Base sagittal dislocation(BPD).

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

* Reference:CRC Materials Science and Engineering Handbook

Comparision of Property of single crystal SiC, 6H and 4H:

* Reference:Xiamen Powerway Advanced Material Co.,Ltd.

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:

* Reference: IOFFE

SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim

SiC Semiconductor Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in Table 5.1. Much more
detailed electrical properties can be found in References 11–13 and references therein. Even within a
given polytype, some important electrical properties are nonisotropic, in that they are strong functions
of crystallographic direction of current flow and applied electric field (for example, electron mobility
for 6H-SiC). Dopant impurities in SiC can incorporate into energetically inequivalent sites. While all
dopant ionization energies associated with various dopant incorporation sites should normally be
considered for utmost accuracy, Table 5.1 lists only the shallowest reported ionization energies of each
impurity.

TABLE 5.1Comparison of Selected Important Semiconductor Electronic Properties of Major SiC Polytypes
with Silicon, GaAs, and 2H-GaN at 300 K

For comparison, Table 5.1 also includes comparable properties of silicon, GaAs, and GaN. Because
silicon is the semiconductor employed in most commercial solid-state electronics, it is the standard
against which other semiconductor materials must be evaluated. To varying degrees the major SiC
polytypes exhibit advantages and disadvantages in basic material properties compared to silicon. The
most beneficial inherent material superiorities of SiC over silicon listed in Table 5.1 are its exceptionally
high breakdown electric field, wide bandgap energy, high thermal conductivity, and high carrier saturation
velocity. The electrical device performance benefits that each of these properties enables are discussed
in the next section, as are system-level benefits enabled by improved SiC devices.