Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
4" Silicon Epitaxial Wafer
brand :
powerway
Resistivity :
0.002 - 0.003Ωcm
feature :
2 Epitaxial Layers
Substrate Thickness :
525 ± 25µm
size :
12"
Description

4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers

PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers for research and development or mass production. PAM-XIAMEN processes single crystalline EPI layers on wafer diameters from 50mm to 150mm. Epitaxy is offered on bare wafers or those with buried layers, patterns or advanced device structures. For epitaxial layer deposition, it is important to determine what type EPI layer the application requires before determining how to deposit it. Homoepitaxy is when a crystalline film is grown with the same material as the substrate. Heteroepitaxy is more common, and grows a crystalline film made of a different material than the substrate. Depending on the type epi layer, there are three different ways that they can be deposited. PAM-XIAMEN offers epitaxial wafers with diameters up to 300mm. While 300mm EPI wafers are primarily used in highly integrated semiconductor elements (ICs), smaller diameters are also used for power applications. In order to satisfy the various requirements, substrates and epitaxial layers are designed according to customer specifications.

4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm, 2 Epitaxial Layers

4" Silicon Epitaxial Wafer Specification
Substrate
Growth Method CZ
Diameter 100 +/- 0.5 mm
Orientation <111> 4 Degree off
Type/Dopant P Type Boron Doped
Resistivity 0.002 - 0.003 Ωcm
Front Side Polished - Epi Ready
Thickness 525 +/-25 μm
Back Side Etched
Epitaxial Layer
Epi Layer 1
Type/Dopant N type Phosphorous Doped
Resistivity 3.8 -5.2 ohm cm
Thickness 29.0 -35.0 um
Epi Layer 2
Type/Dopant N type Phosphorous Doped
Resistivity < 0.0016 - 0.0024 ohm cm
Thickness 36.0 -44.0 um
We provide SRP for the finished Silicon Epi Wafer

What is silicon epi wafer?

Epitaxy is a process in which an additional monocrystalline silicon layer is deposited on to the polished crystal surface of a silicon wafer. This process makes it possible to select the material properties independently of the polished substrate, and consequently to create wafers that have different properties in the substrate and the epitaxial layer. In many cases this is necessary for the semiconductor component’s function.

PAM-XIAMEN can offer you technology and wafer support, for more information, please visit our website: https://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers

Ask Latest Price
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
4 Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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