4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"

PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) on Silicon Wafers) size from 2” to 6” taken place from 850°C up to 1200°C , SiO2 thin film layers on substrate is mainly used as dielectric material and more recently, which are integrated in MEMS (Micro Electro Mechanical Systems) devices., currently the simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen. Usually, thermal oxidation is made on both faces of a silicon wafer. To get only one side oxidized, a protection is used, then the opposite side is dissolved in BHF. As the thermal oxidation is made by run of 25 to 50 wafers and the dissolution is made wafer by wafer; double and single side silicon oxide wafers can be purchased in the same batch.

4inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"

How is Thermal Oxide Applied to Silicon Wafers?

Regularly there are three detail application:

1/Grown Dry Oxidation - By default dry oxide is grown on just one side of the wafer.

2/Wet Oxidation Grown - Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.

3/Deposited CVD - When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.

Are You Looking for an Silicon Wafer?

PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com