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N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company
N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
GaSb Gallium Antimonide wafer
Conduction Type :
N Type
Dopant :
Tellurium
Grade :
Test Grade
other name :
single crystal GaSb Wafer
Wafer Diameter :
2 inch
Description

N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company

PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

2" GaSb Wafer Specification
ItemSpecifications
DopantTellurium
Conduction TypeN-type
Wafer Diameter2"
Wafer Orientation(100)±0.5°
Wafer Thickness500±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration(1-20)x1017cm-3
Mobility2000-3500cm2/V.s
EPD<2x103cm-2
TTV<10um
BOW<10um
WARP<12um
Laser Markingupon request
Suface FinishP/E, P/P
Epi Readyyes
PackageSingle wafer container or cassette

Band structure and carrier concentration of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors

Basic Parameters

Energy gap0.726 eV
Energy separation (EΓL) between Γ and L valleys0.084 eV
Energy separation (EΓX) between Γ and X valleys0.31 eV
Energy spin-orbital splitting0.80 eV
Intrinsic carrier concentration1.5·1012 cm-3
Intrinsic resistivity103 Ω·cm
Effective conduction band density of states2.1·1017 cm-3
Effective valence band density of states1.8·1019 cm-3
N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer CompanyBand structure and carrier concentration of GaSb. 300 K
Eg= 0.726 eV
EL = 0.81 eV
EX = 1.03 eV
Eso = 0.8 eV

Temperature Dependences

Temperature dependence of the energy gap

Eg = 0.813 - 3.78·10-4·T2/(T+94) (eV),
where T is temperature in degrees K (0 < T < 300).

Temperature dependence of energy EL

EL = 0.902 - 3.97·10-4·T2/(T+94) (eV)

Temperature dependence of energy EX

EX = 1.142 - 4.75·10-4·T2/(T+94) (eV)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the valence band

Nv = 3.5·1015·T3/2 (cm-3)

N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer CompanyThe temperature dependences of the intrinsic carrier concentration.

Dependences on Hydrostatic Pressure

Eg = Eg(0) + 14.5·10-3P (eV)
EL = EL(0) + 5.0·10-3P (eV)
EX = EX(0) - 1.5·10-3P (eV),
where P is pressure in kbar.

Energy Gap Narrowing at High Doping Levels

N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer CompanyEnergy gap narrowing versus acceptor acceptor doping density.
Curve is calculated for p-GaSb according to
Points show experimental results

For n-type GaSb

Eg = 13.6·10-9·Nd1/3 + 1.66·10-7·Nd1/4 + 119·10-12·Nd1/2 (eV)

For p-type GaSb

Eg = 8.07·10-9·Na1/3 + 2.80·10-7·Na1/4+ 4.12·10-12·Na1/2 (eV)

Effective Masses

Electrons:

For Γ-valleymΓ = 0.041mo
In the L- valley the surfaces of equal energy are ellipsoids
ml= 0.95mo
mt= 0.11mo
Effective mass of density of states
mL= 16(mlmt2)1/3= 0.57mo
In the X- valley the surfaces of equal energy are ellipsoids
ml= 1.51mo
mt= 0.22mo
Effective mass of density of states
mX= 9(mlmt2)1/3= 0.87mo

Holes:

Heavymh = 0.4mo
Lightmlp = 0.05mo
Split-off bandmso = 0.14mo
Effective mass of density of statesmv = 0.8mo
Effective mass of density of conductivity
mvc = 0.3mo

Donors and Acceptors

N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer CompanyThe diagram of IV group donor states

Ionization energies of shallow donors (eV)

Te(L)Te(X)Se(L)Se(X)S(L)S(X)
~0.02≤0.08~0.05~0.23~0.15~0.30

For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.

Ionization energies of shallow acceptors (eV):

The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable

Ea1Ea2SiGeZn
0.030.1~0.01~0.009~0.037


Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!


















Product tags

a106 grade b properties

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gasb wafer

,

kingford pcb electronics co
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N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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