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N Type , Te-Doped GaSb Wafer , 2”, Prime Grade , Epi Ready
N Type , Te-Doped GaSb Wafer , 2”, Prime Grade , Epi Ready
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
GaSb Wafer
Conduction Type :
N Type
Dopant :
Tellurium
Grade :
Prime Grade
other name :
single crystal Gallium Antimonide Wafer
Wafer Diameter :
2"
Description

N Type , Te-Doped GaSb Wafer , 2”, Prime Grade , Epi Ready

PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer GaSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

2" GaSb Wafer Specification
Item Specifications
Dopant Tellurium
Conduction Type N-type
Wafer Diameter 2"
Wafer Orientation (100)±0.5°
Wafer Thickness 500±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration (1-20)x1017cm-3
Mobility 2000-3500cm2/V.s
EPD <2x103cm-2
TTV <10um
BOW <10um
WARP <12um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette


Basic Parameters at 300 K of GaSb Wafer

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 3.53·1022
Debye temperature 266 K
Density 5.61 g cm-3
Dielectric constant (static) 15.7
Dielectric constant (high frequency) 14.4
Effective electron mass 0.041mo
Effective hole masses mh 0.4mo
Effective hole masses mlp 0.05mo
Electron affinity 4.06 eV
Lattice constant 6.09593 A
Optical phonon energy 0.0297 eV

Are You Looking for an GaSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

316l composition

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pa66 material specification

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pa66 material properties
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N Type , Te-Doped GaSb Wafer , 2”, Prime Grade , Epi Ready

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
N Type , Te-Doped GaSb Wafer , 2”, Prime Grade , Epi Ready

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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