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N Type , High Conductive GaSb Substrate , 3”, Dummy Grade
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
GaSb wafer
Conduction Type :
N Type
Dopant :
Tellurium
Grade :
dummy grade
other name :
gallium antimonide Wafer
Wafer Diameter :
3"
Description

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

PAM-XIAMEN offers GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

3" GaSb Wafer Specification

Item Specifications
Conduction Type N-type
Dopant Tellurium
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration (1-20)x1017cm-3
Mobility 2000-3500cm2/V.s
EPD <2x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Optical properties of GaSb Wafer

Index of refraction 3.8
Radiative recombination coefficient ~ 10-10 cm3s-1

Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)

Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Refractive index n versus photon energy, 300 K
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Reflectivity versus photon energy, 300 K
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples.
T(K): 1. 300, 2. 77, 3. 4.2
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Intrinsic absorption edge in p-type GaSb.
Na = 3·1019 cm-3;
T(K): 1. 215; 2. 140; 3. 77
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade Intrinsic absorption edge at 77 K for different doping levels, p-GaSb.
Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019

A ground state Rydberg energy RX1 = 2.8 meV.

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade The absorption coefficient versus photon energy, T=300 K
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade The impurity absorption at low photon energies, T=80 K
Undoped sample (p = 2.4·1017 cm-3 at 300 K)
Te added (p = 7.5·1016 cm-3)
Se added (p = 4.1·1016 cm-3)

Are You Looking for an GaSb substrate?

PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

ptfe sheet carbon filled

,

ltcc substrate

,

gasb wafer
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N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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