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Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready
Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
Gallium Antimonide Substrate Wafer
Conduction Type :
P type
Dopant :
Undoped
Wafer Thickness :
800±25um
other name :
GaSb Polished Wafer
Wafer Diameter :
4 inch
Description

Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready

PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).

4" GaSb Wafer Specification

Item Specifications
Dopant Undoped
Conduction Type P-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 800±25um
Primary Flat Length 32.5±2.5mm
Secondary Flat Length 18±1mm
Carrier Concentration (1-2)x1017cm-3
Mobility 600-700cm2/V.s
EPD <2x103cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Thermal and mechanical properties of GaSb Wafer

Bulk modulus 5.63·1011 dyn cm-2
Melting point 712 °C
Specific heat 0.25 J g-1°C -1
Thermal conductivity 0.32 W cm-1 °C-1
Thermal diffusivity 0.23 cm2s-1
Thermal expansion, linear 7.75·10-6 °C -1

Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready Temperature dependence of thermal conductivity n-GaSb.
Electron concentration at 300 K
n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018;
p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3)
Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready Temperature dependence of thermal conductivity
(for high temperature)
Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready Temperature dependence of specific heat at constant pressure
Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready Temperature dependence of linear expansion coefficient

Are You Looking for an GaSb substrate?

PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

ic on alumina substrate

,

aluminim pcb board calc

,

indium phosphide wafer
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Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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