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P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway Wafer
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway Wafer
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
Gallium Antimonide GaSb Wafer
feature :
Prime Grade
Dopant :
Zinc
Wafer Thickness :
600±25um
other name :
P Type GaSb Wafer
Wafer Diameter :
3”
Description

P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway Wafer

PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

3" GaSb Wafer Specification

ItemSpecifications
Conduction TypeP-type
DopantZinc
Wafer Diameter3"
Wafer Orientation(100)±0.5°
Wafer Thickness600±25um
Primary Flat Length22±2mm
Secondary Flat Length11±1mm
Carrier Concentration(5-100)x1017cm-3
Mobility200-500cm2/V.s
EPD<2x103cm-2
TTV<12um
BOW<12um
WARP<15um
Laser markingupon request
Suface finishP/E, P/P
Epi readyyes
PackageSingle wafer container or cassette

Electrical properties of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields
,Impact Ionization,Recombination Parameters

Basic Parameters

Breakdown field≈5·104
Mobility electrons≤ 3000 cm2 V-1 s-1
Mobility holes≤ 1000 cm2 V-1 s-1
Diffusion coefficient electrons≤ 75 cm2/s
Diffusion coefficient holes≤ 25 cm2/s
Electron thermal velocity5.8·105 m/s
Hole thermal velocity2.1·105 m/s

Mobility and Hall Effect

P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferElectron Hall mobility versus temperature for different doping levels.
1. Nd= 1.7·1018 cm-3
2. Nd= 2.8·1017 cm-3
Broken curves represent the experimental data. Continuous curves represent theoretical calculations.
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferElectron Hall mobility versus electron concentration no. T=77 K.
Open circles represent measurements with a group of samples having approximately the same residual acceptor concentrations Na. Full symbols:specimens with lower residual acceptor concentrations. Solid lines represent the theoretical calculations for different values of compensating acceptor densities - either singly (Na-) or doubly (Na--) ionized.
1. Na- = 1.2·1017 or Na-- = 0.4·1017 cm-3
2. Na- =2.85·1017 or Na-- =0.95·1017 cm-3
3. Na- = 4.5·1017 or Na-- = 1.5·1017 cm-3
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferHole Hall mobility versus temperature at different compensation levels.
1. Na= 1.39·1017 cm-3; Nd= 9·1015 cm-3;
2. Na= 1.3·1017 cm-3; Nd= 9.5·1016 cm-3;
3. Na= 1.1·1017cm-3; Nd= 9.5·1016 cm-3
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferTemperature dependence of hole Hall mobility.
MBE technique. Hole concentration at 300 K:
1. - 2.28·1016 cm-3;
2. - 1.9·1019 cm-3.
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferThe hole Hall mobility versus hole concentration, 300 K.
Experimental data are taken from five different papers

Transport Properties in High Electric Fields

P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferCalculated field dependence of the electron drift velocity, 300 K.
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferCalculated (solid) end experimental (points) current density dependencies versus the electric field, 300 K.
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferFraction of electrons in Γ, L, X valleys as a function of electric field,300 K
n=6.8·1016 cm-3
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferElectron temperature as a function of the electric field, T=77 K.
full and open circle - experimental data
curve are calculated

Impact Ionization

P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferThe dependences of αi and βi> versus 1/F. T=77 K
Open symbols : F (111).
Filled symbols : F (100).
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferThe dependences of αi and βi versus 1/F). T=300 K
F (100).

Recombination Parameters

P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferRadiative lifetime versus donor concentration, T =77 K, GaSb(Te).
To extract these dependences from experimental data the values of internal quantum efficiency η were taken:
open circles η=0.8;
filled circles η=1;
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferNonradiative lifetime versus donor concentrations, T =77K, GaSb(Te).
open circles η= 0.8;
filled circles η= 1; (Agaev et al. [1984]).
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferElectron radiative (triangles) and nonradiative (squares) lifetime versus acceptor concentration, p-GaSb, T=77 K.
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway WaferElectron lifetime versus temperature at different acceptor concentrations.
Na (cm-3): 1. 5·1018; 2. 2.2·1019; 3. 3.5·1019.

Radiative recombination coefficient~10-10 cm3 s-1
Auger coefficient
77K2·10-29 cm6s-1
300 K5·10-30 cm6s-1


Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!


















































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P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway Wafer

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
P Type , GaSb Wafer , 3”, Prime Grade , Epi Ready -Powerway Wafer

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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