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P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer
P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
4 inch GaSb Wafer
feature :
Prime Grade
Dopant :
Zinc
Wafer Thickness :
800±25um
other name :
Gallium Antimonide Wafer
Wafer Diameter :
4”
Description

P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer

PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer GaSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

4" GaSb Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 800±25um
Primary Flat Length 32.5±2.5mm
Secondary Flat Length 18±1mm
Carrier Concentration (5-100)x1017cm-3
Mobility 200-500cm2/V.s
EPD <2x103cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Thermal and mechanical properties of GaSb Wafer

Bulk modulus 5.63·1011 dyn cm-2
Melting point 712 °C
Specific heat 0.25 J g-1°C -1
Thermal conductivity 0.32 W cm-1 °C-1
Thermal diffusivity 0.23 cm2s-1
Thermal expansion, linear 7.75·10-6 °C -1

P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer Temperature dependence of thermal conductivity n-GaSb.
Electron concentration at 300 K
n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018;
p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3)
P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer Temperature dependence of thermal conductivity
(for high temperature)
P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer Temperature dependence of specific heat at constant pressure
P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer Temperature dependence of linear expansion coefficient

Are You Looking for an GaSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

inp wafer

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kingford pcb electronics co

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soi wafer
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P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
P Type , GaSb Wafer , 4”, Prime Grade , Epi Ready -Powerway Wafer

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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