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P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer
P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
product name :
3 inch GaSb Wafer
feature :
Test Grade
Dopant :
Zinc
Wafer Thickness :
600±25um
other name :
Gallium Antimonide Wafer
Wafer Diameter :
3”
Description

P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer

PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer GaSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.


3" GaSb Wafer Specification

Item Specifications
Conduction Type P-type
Dopant Zinc
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration (5-100)x1017cm-3
Mobility 200-500cm2/V.s
EPD <2x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Optical properties of GaSb Wafer

Index of refraction 3.8
Radiative recombination coefficient ~ 10-10 cm3s-1

Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)

Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).

P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer Refractive index n versus photon energy, 300 K
P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer Reflectivity versus photon energy, 300 K
P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples.
T(K): 1. 300, 2. 77, 3. 4.2
P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer Intrinsic absorption edge in p-type GaSb.
Na = 3·1019 cm-3;
T(K): 1. 215; 2. 140; 3. 77
P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer Intrinsic absorption edge at 77 K for different doping levels, p-GaSb.
Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019

A ground state Rydberg energy RX1 = 2.8 meV.

P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer The absorption coefficient versus photon energy, T=300 K
P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer The impurity absorption at low photon energies, T=80 K
Undoped sample (p = 2.4·1017 cm-3 at 300 K)
Te added (p = 7.5·1016 cm-3)
Se added (p = 4.1·1016 cm-3)

Are You Looking for an GaSb substrate?

PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

gasb wafer

,

a106 grade b pipe

,

pipe a106 grade b
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P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Price :
By Case
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Contact Supplier
P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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