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N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎
N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
InSb Wafer
Wafer Diamter :
2 inch
Conduction Type :
N Type
Grade :
Test Grade
Wafer Thickness :
50.5±0.5mm
keyword :
single crystal InSb Wafer
Description

N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎

PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .

Please contact our engineer team for more wafer information.

N Type, InSb Wafer, 2”, Test Grade

Wafer Specification
ItemSpecifications
Wafer Diameter

2″50.5±0.5mm

Crystal Orientation

2″(111)AorB±0.1°

Thickness

2″625±25um

Primary flat length

2″16±2mm

Secondary flat length

2″8±1mm

Surface FinishP/E, P/P
PackageEpi-Ready,Single wafer container or CF cassette

Electrical and Doping Specification
Conduction Typen-typen-typen-typen-type
DopantUndopedTelluriumLow telluriumHigh tellurium
EPD cm-2≤50
Mobility cm² V-1s-1≥4*105≥2.5*104≥2.5*105Not Specified
Carrier Concentration cm-35*1013-3*1014(1-7)*10174*1014-2*1015≥1*1018


Band structure and carrier concentration of InSb Wafer

Band structure and carrier concentration of InSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors

Basic Parameters
Temperature Dependences
Dependence of the Energy Gap on Hydrostatic Pressure
Effective Masses
Donors and Acceptors

Basic Parameters

Energy gap0.17 eV
Energy separation (EΓL) between Γ and L valleys0.51 eV
Energy separation (EΓX) between Γ and X valleys0.83 eV
Energy spin-orbital splitting0.80 eV
Intrinsic carrier concentration2·1016 cm-3
Intrinsic resistivity4·10-3 Ω·cm
Effective conduction band density of states4.2·1016 cm-3
Effective valence band density of states7.3·1018 cm-3

N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎Band structure and carrier concentration of InSb 300 K
Eg = 0.17 eV
EL = 0.68 eV
EX= 1.0 eV
Eso = 0.8 eV

Temperature Dependences

Temperature dependence of the energy gap

Eg = 0.24 - 6·10-4·T2/(T+500) (eV),
where T is temperatures in degrees K (0 < T < 300).

Effective density of states in the conduction band

Nc~ 8·1012·T3/2 (cm-3)

Effective density of states in the valence band

Nn ~ 1.4·1015·T3/2 (cm-3).

Intrinsic Carrier Concentration

ni = (Nc·Nν)1/2exp(-Eg/(2kbT))
For 200K < T < 800 K ni = 2.9·1011(2400 - T)3/4 ·(1+2.7·10-4·T)·T3/2 ·exp(-(0.129 - 1.5·10-4T)/(2kbT)) (cm-3)

N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎The temperature dependences of the intrinsic carrier concentration.
N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎Fermi level versus temperature for different concentrations of shallow donors and acceptors.

Dependences on Hydrostatic Pressure

Eg≈Eg(0) + 13.7·10-3P - 3.6·10-5P2 (eV)
EL≈EL(0) + 4.7·10-3P - 1.1·10-5P2 (eV)
EX≈EX(0) - 3.5·10-3P + 0.64·10-5P2 (eV),
where P is pressure in kbar.

Effective Masses

Electrons:
For Γ-valleymΓ = 0.0.14mo
Non-parabolicity:
E(1+αE) = h2k2/(2mΓ)		α = 4.1 (eV-1)
In the L-valley effective mass of density of statesmL=0.25mo

N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎Electron effective mass versus electron concentration

Holes:mh = 0.43mo
Heavymh = 0.43mo
Lightmlp = 0.015mo
Split-off bandmso = 0.19mo
Effective mass of density of statesmv = 0.43mo

Donors and Acceptors

Ionization energies of shallow donors ~0.0007 (eV):

Se, S, Te.

Ionization energies of shallow acceptors (eV):

CdZnCrCu°Cu-
0.010.010.070.0280.056

Are You Looking for an InSb substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InSb wafers, send us enquiry today to learn more about how we can work with you to get you the InSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

























Product tags

silicon wafer specifications

,

insb wafer

,

wafer manufacture
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N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing‎

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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