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Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer
Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Undoped Indium Antimonide InSb Wafer
Wafer Diamter :
2″
Package :
Epi-Ready,Single wafer container or CF cassette
feature :
single crystal InSb Wafer
Wafer Thickness :
625±25um
keyword :
Mechanical Wafer
Description


Undoped InSb Wafer, 2”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer

PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .

Undoped InSb Wafer, 2”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer

Please contact our engineer team for more wafer information.

Wafer Specification
Item Specifications
Wafer Diameter

2″50.5±0.5mm
Crystal Orientation

2″(111)AorB±0.1°
Thickness

2″625±25um
Primary flat length

2″16±2mm
Secondary flat length

2″8±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette

Electrical and Doping Specification
Conduction Type n-type
Dopant Undoped
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥4*105
Carrier Concentration cm-3 5*1013-3*1014


Band structure and carrier concentration of InSb Wafer

Band structure and carrier concentration of InSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors

Basic Parameters
Temperature Dependences
Dependence of the Energy Gap on Hydrostatic Pressure
Effective Masses
Donors and Acceptors

Basic Parameters

Energy gap 0.17 eV
Energy separation (EΓL) between Γ and L valleys 0.51 eV
Energy separation (EΓX) between Γ and X valleys 0.83 eV
Energy spin-orbital splitting 0.80 eV
Intrinsic carrier concentration 2·1016 cm-3
Intrinsic resistivity 4·10-3 Ω·cm
Effective conduction band density of states 4.2·1016 cm-3
Effective valence band density of states 7.3·1018 cm-3

Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Band structure and carrier concentration of InSb 300 K
Eg = 0.17 eV
EL = 0.68 eV
EX= 1.0 eV
Eso = 0.8 eV

Temperature Dependences

Temperature dependence of the energy gap

Eg = 0.24 - 6·10-4·T2/(T+500) (eV),
where T is temperatures in degrees K (0 < T < 300).

Effective density of states in the conduction band

Nc~ 8·1012·T3/2 (cm-3)

Effective density of states in the valence band

Nn ~ 1.4·1015·T3/2 (cm-3).

Intrinsic Carrier Concentration

ni = (Nc·Nν)1/2exp(-Eg/(2kbT))
For 200K < T < 800 K ni = 2.9·1011(2400 - T)3/4 ·(1+2.7·10-4·T)·T3/2 ·exp(-(0.129 - 1.5·10-4T)/(2kbT)) (cm-3)

Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer The temperature dependences of the intrinsic carrier concentration.
Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Fermi level versus temperature for different concentrations of shallow donors and acceptors.

Dependences on Hydrostatic Pressure

Eg≈Eg(0) + 13.7·10-3P - 3.6·10-5P2 (eV)
EL≈EL(0) + 4.7·10-3P - 1.1·10-5P2 (eV)
EX≈EX(0) - 3.5·10-3P + 0.64·10-5P2 (eV),
where P is pressure in kbar.

Effective Masses

Electrons:
For Γ-valley mΓ = 0.0.14mo
Non-parabolicity:
E(1+αE) = h2k2/(2mΓ)		 α = 4.1 (eV-1)
In the L-valley effective mass of density of states mL=0.25mo

Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer Electron effective mass versus electron concentration

Holes: mh = 0.43mo
Heavy mh = 0.43mo
Light mlp = 0.015mo
Split-off band mso = 0.19mo
Effective mass of density of states mv = 0.43mo

Donors and Acceptors

Ionization energies of shallow donors ~0.0007 (eV):

Se, S, Te.

Ionization energies of shallow acceptors (eV):

Cd Zn Cr Cu° Cu-
0.01 0.01 0.07 0.028 0.056

Are You Looking for an InSb substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InSb wafers, send us enquiry today to learn more about how we can work with you to get you the InSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

polished silicon wafer

,

cut silicon wafer

,

dicing wafer
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Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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