Undoped, Indium Antimonide Substrate, 3”, Prime Grade

PAM-XIAMEN offers InSb wafer – Indium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths.

Undoped, Indium Antimonide Substrate, 3”, Prime Grade

Electrical properties of InSb Wafer

Band structure and carrier concentration of InSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields,Impact Ionization
,Recombination Parameters

Basic Parameters
Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different doping levels and different compensation ratios Curve Nd (cm-3) θ = Na/Nd 1. 3.85·1014 0.5 2. 8.5·1014 0.88 3. 9.5·1014 0.98 4. 1.35·1015 0.99
	Electron mobility versus temperature (high temperatures). Solid line is theoretical calculation for electron-drift mobility. Experimental data are Hall mobilities.

For pure n-InSb at T ≥ 200K:
µnH≈7.7·104(T/300)-1.66 (cm2 V-1 s-1).

	Electron mobility versus electron concentration. T = 300 K
	Electron mobility versus electron concentration. T = 77 K
	The electron Hall factor versus carrier concentration. T = 77 K

Hole Hall mobility versus temperature for different hole concentrations. po (cm-3): 1. 8·1014; 2. 3.15·1018; 3. 2.5·1019;

For pure p-InSb at T > 60K:
µpH≈850(T/300)-1.8 (cm2V-1s-1)

	Hall mobility versus hole concentrations: 1. 77 K 2. 290K
	The hole Hall factor versus carrier concentration, 77 K

Transport Properties in High Electric Fields

	Field dependence of the electron drift velocity, 77 K. Solid lines is the Monte Carlo calculation. Points are experimental data.
	Field dependence of the electron drift velocity, 77 K. Solid lines is the Monte Carlo calculation. Points are experimental data.
	Fraction of electrons in the L-valley as a function of electric field F, 77K
	Frequency dependence of the efficiency in LSA mode Fo = F + F1sin(2π·ft): Fo= 2.5 kV cm-1

Impact Ionization

The dependence of generation rate for electrons gn versus electric field F, 300 K

For 300 K, for 30 V/cm < F < 300 V/cm:

gn(F) = 126·F2exp(F/160) (s-1),

where F is in V cm-1.

	The dependence of generation rate for electrons gn versus electric field F, 77 K
	The dependence of ionization rates for electrons αi versus the electric field F, T=78 K
	The dependence of generation rate for holes gp versus the electric field F, T =77K

Recombination Parameters

For pure InSb at T≥250K lifetime of carrier (electrons and holes) is determined by Auger recombination:
τn = τp ≈1/C ni2,
where C≈5·10-26 cm-6 s-1 is the Auger coefficient.
ni is the intrinsic carrier concentration.

	Temperature dependence of surface recombination velocity for p-InSb.
	Temperature dependence of surface recombination velocity for n-InSb.

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