MachineU > China Products > Minerals & Metallurgy > Non-ferrous Metal > Ingots > Indium Ingots
N Type , LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready
N Type , LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
N Type InSb Wafer
Wafer Diamter :
2”
Conduction Type :
N Type
Grade :
Prime Grade
Wafer Thickness :
50.5±0.5mm
keyword :
InSb Indium Antimonide Wafer
Description

N Type , LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready

PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnetoresistance or the Hall effect, fast transistors (in terms of dynamic switching) due to the high carrier mobility of InSb, in some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope. Our standard wafer diameters range from 1 inch to 3 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer InSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

N Type, InSb Wafer, 2”, Prime Grade, Epi Ready

Wafer Specification
Item Specifications
Wafer Diameter

2″ 50.5±0.5mm
Crystal Orientation

2″ (111)AorB±0.1°
Thickness

2″ 625±25um
Primary flat length

2″ 16±2mm
Secondary flat length

2″ 8±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette

Electrical and Doping Specification
Conduction Type n-type n-type n-type
Dopant Tellurium Low tellurium High tellurium
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥2.5*104 ≥2.5*105 Not Specified
Carrier Concentration cm-3 (1-7)*1017 4*1014-2*1015 ≥1*1018

Basic Parameters at 300 K of InSb Wafer

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 2.94·1022
Debye temperature 160 K
Density 5.77 g cm-3
Dielectric constant
static 16.8
high frequency 15.7
Effective electron mass 0.014mo
Effective hole masses mh 0.43mo
Effective hole masses mlp 0.015mo
Electron affinity 4.59 eV
Lattice constant 6.479 A
Optical phonon energy 0.025 eV

Are You Looking for an InSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

indium phosphide wafer

,

a106 grade b properties

,

pcb component identification
Send your message to this supplier
Send Now

N Type , LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready

Ask Latest Price
Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
N Type , LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products InSb Wafer
MachineU China Products Minerals & Metallurgy Non-ferrous Metal Ingots Indium Ingots
Contact Supplier
Submit Requirement