2 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 2"

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon doctor semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. For almost 30 years, PAM-XIAMEN aims to manufacture monocrystalline silicon wafer from the pulling process to get the ingot up to the final step which is the cleaning process, and vertically integrating to epi growth(silicon epi wafer) . This production and epi growth flow allows to maintain a reliable and qualitative consistency. Welcome you to enquire our engineer team, and we will give you full technology support.

2inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 2"

What is the Difference Between CZ Method and FZ method?

CZ (Czochralski) Method

CZ silicon is mainly used in logic and memory chips, accounting for about 95% of the market, which is the mainstream technology of growing monocrystalline silicon. The wafer doping is also carried out in the process of pulling single crystal, usually there are two kinds of doping method: liquid-phase doping and gas-phase doping. Liquid phase doping refers to mixing p-type or n-type elements in the crucible. In the process of pulling single crystal, these elements can be directly pulled into the silicon rod. The main process is as follows:

Single crystal formation: put polycrystalline silicon into the crucible, heat it to make it melt, then clamp the seed crystal of a single crystal silicon, suspend it on the crucible, when pulling straight, insert one end into the melt until melting, and then slowly rotate and pull upward. In this way, the liquid and solid interface will gradually condense to form a single crystal. As the whole process can be seen as the process of reproducing seed crystal, the silicon crystal generated is monocrystalline silicon.

Diameter rolling grinding: it is difficult to control the diameter of single crystal silicon rod in the process of pulling single crystal, so in order to get standard diameter silicon rod, such as 6 inch, 8 inch, 12 inch and so on. After pulling the single crystal, the diameter of the ingot will be rolled, and the surface of the rolled ingot will be smooth, and the size error will be smaller.

Cutting chamfer: after obtaining the silicon ingot, cut the wafer, place the silicon ingot on the fixed cutting machine, and cut according to the set cutting program. Because the thickness of the wafer is small, the edge of the cut wafer is very sharp. The purpose of chamfering is to form smooth edges. The chamfered silicon wafer has a lower central stress, which makes it more solid, and is not easy to fragment in later chip manufacturing.

Polishing: the main purpose of polishing is to make the surface of the wafer smoother, flat and undamaged, and to ensure the thickness consistency of each wafer.

Test package: after the polished silicon wafer is obtained, the electrical characteristics of the silicon wafer need to be tested, such as resistivity and other parameters. Most silicon factories have epitaxial wafer services. If epitaxial wafer is needed, epitaxial wafer growth will be carried out. If there is no need for epitaxial wafers, they will be packed and transported to other epitaxial wafer factories or wafer factories.

FZ (zone melting) Method

FZ wafers are mainly used in some power chips, accounting for about 4% of the market; FZ wafers are mainly used as power devices. At present, about 15% of silicon wafers are made by zone melting. Compared with CZ method, the biggest feature of FZ method is relatively high resistivity, higher purity and high voltage resistance, but it is difficult to make large-scale wafer, and its mechanical properties are poor, so it is often used in power device silicon, and less used in integrated circuit.

There are three steps to produce the single crystal rod by zone melting: heating the polycrystalline silicon, contacting the seed crystal, and pulling the single crystal downward. In the furnace chamber under vacuum or inert gas environment, the polycrystalline silicon rod is heated by electric field until the polycrystalline silicon in the heated area melts, forming the melting area. Then contact the melting zone with seed crystal and melt. Finally, by moving the electric field heating position, the melting area on the polysilicon is moved up continuously, while the seed crystal rotates slowly and stretches down to form the monocrystalline silicon rod gradually. Because the crucible is not suitable in the zone melting method, many pollution sources are avoided. The single crystal of the zone melting Faraday has the characteristics of high purity.