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4 inch N type SiC ingots and SiC wafers manufacturer
4 inch N type SiC ingots and SiC wafers manufacturer
Specifications
Brand Name :
HMT
Model Number :
4INCH
Place of Origin :
CHINA
MOQ :
10PCS
Payment Terms :
T/T
Description

4 inch N type SiC ingots and SiC wafers manufacturer

As the leading manufacturer of SiC substrates ,HMT company supply high quality 4 inch and 6 inch SiC ingots. The average thickness of SiC ingots are 20mm. We provide conductive N type and semi-insulating type of SiC ingots. We supply the best price on the market in worldwide, please feel free to contact us for detailed specifications. Silicon Carbide is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. SiC is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers).


Product tags

silicon carbide supplier

,

silicon carbide crucible suppliers

,

silicon carbide manufacturers
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4 inch N type SiC ingots and SiC wafers manufacturer

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Product Detail
Brand Name :
HMT
Model Number :
4INCH
Place of Origin :
CHINA
MOQ :
10PCS
Payment Terms :
T/T
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4 inch N type SiC ingots and SiC wafers manufacturer

Homray Material Technology

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