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4 inch GaN-on-Si epi wafer manufacturer for Power HEMT
4 inch GaN-on-Si epi wafer manufacturer for Power HEMT
Specifications
Brand Name :
HMT
Model Number :
4 inch
Place of Origin :
China
MOQ :
10PCS
Payment Terms :
T/T
Delivery Time :
1 month
Description

4 inch GaN-on-Si epi wafer manufacturer Power HEMT

Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers:

5G-related RF devices, such as power amplifier

High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.

Durable and reliable devices in harsh environments

High-end sensor devices

Product tags

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4 inch GaN-on-Si epi wafer manufacturer for Power HEMT

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Product Detail
Brand Name :
HMT
Model Number :
4 inch
Place of Origin :
China
MOQ :
10PCS
Payment Terms :
T/T
Delivery Time :
1 month
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4 inch GaN-on-Si epi wafer manufacturer for Power HEMT

Homray Material Technology

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4 Years
Main Products :
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Certification Level :
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