808nm Wavelength 1W Output Power Unmounted Laser Diode Single Emitter

HTOE has been focusing on the semiconductor wafer technology since 1998, delivers the multimode high power at wavelengths between 635 and 1064nm. HTOE-E-500-0808-TE-001W-900 unmounted laser diode single emitter is an excellent choice for customers seeking state-of-art performance for laser development and customer applications. It outputs 1 watt (CW) power at 808nm center wavelength with narrow emitter width of 100 μm.

Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

Features

• High output power 1W at CW mode;
• 808nm center wavelength;
• High reliability

Applications

• OEM Medical
• Consumer Medical
• Research
• DPSS pump source
• LiDAR
• Military / Aerospace

Production lines around the world benefit from diodebased laser systems, 24 hours a day, 7 days a week. Any maintenance or replacement of production equipment comes at the expense of productivity, and ensuring productivity through redundancy systems would further increase the cost. Therefore, long lifetimes and stable operation without spontaneous failures are key factors for the success of laser systems for material processing. With lifetimes of more than 30,000 hours HTOE unmounted single emitter laser diodes enable systems with extraordinary lifetimes, allowing you to offer attractive and more competitive warranties to your customers.

Parameters(25℃)

Notice

1. Item notice: HTOE-E-500(Width)-0808(center wavelength)-TE(polarization mode)-001W(output power)-900(cavity length).

2. Data sheet is based on the testing results under 25℃.

3. Data sheet is based on the C-Mount package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.