2W Output Power 808nm Wavelength Unmounted Laser Diode Single Emitter
Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.
HTOE has been focusing on the semiconductor wafer technology since 1998, delivers the multimode high power at wavelengths between 635 and 1064nm. HTOE-E-500-0808-TE-002W-1000 unmounted laser diode single emitter is an excellent choice for customers seeking state-of-art performance for laser development and customer applications. It outputs 2 watt (CW) power at 808nm center wavelength with narrow emitter width of 150 μm.
Features
Special Designed for cleaving into single emitters
Applications
Parameters(25℃)
Parameter | Unit | HTOE-E-500-0808-TE-002W-1000 | |
---|---|---|---|
Optical Parameter | Output Power Po | mW | 2000 |
Center Wavelength λc | nm | 808 ± 5 | |
Beam Divergence θ⊥×θ∥ | deg | 38x10 | |
COD | W | ≥ 4.00 | |
Geometrical | Emitter Width | μm | 150 |
Width | μm | 500 | |
Cavity Length | μm | 1000 | |
Electrical Parameter | Slope Efficiency Es | W/A | ≥ 1.15 |
Threshold Current Ith | A | ≤ 0.6 | |
Operating Current If | A | ≤ 2.3 | |
Operating Voltage Vf | V | ≤ 2 |
Notice
1. Item notice: HTOE-E-500(Width)-0808(center wavelength)-TE(polarization mode)-002W(output power)-1000(cavity length).
2. Data sheet is based on the result of testing under 25℃.
3. Data sheet is based on the C-Mount package testing.
4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.