40 watt Laser Diode Bar , 808 nm Laser Diode Unmounted Bar
Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.
HTOE has been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.
Parameters(25℃)
Parameter | Unit | LDAC1-0808-0040 | |
Optical Parameter | Operation Mode | - | CW |
Output Power Po | W | 40 | |
Center Wavelength λc | nm | 808 ± 5 | |
Geometrical | Fill Factor | - | 30% |
Number of Unmounted Single Emitters | - | 19 | |
Electrical Parameter | Slope Efficiency Es | W/A | ≥1.1 |
Threshold Current Ith | A | ≤7 | |
Operating Current If | A | ≤40 | |
Operating Voltage Vf | V | ≤2 |
Notice
1. Item notice: LDAC1 (item model)-**** (center wavelength)-**** (output power).
2. Data sheet is based on the result of testing under 25℃.
3. Data sheet is based on the CS package testing.
4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.