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808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars
808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars
Specifications
Brand Name :
HTOE
Model Number :
LDAQ1-0808-0100
Place of Origin :
Beijing, China
MOQ :
50 pcs
Price :
Negotiable
Payment Terms :
T/T
Supply Ability :
100 pcs per month
Delivery Time :
15-25 working days
Packaging Details :
Paper Box
Operation Mode :
QCW
Output Power :
100 watt
Center Wavelength :
808±5 nm
Fill Factor :
87%
Number of Unmounted Single Emitters :
100
Description

100 watt High Power Laser Diode Bar , 808 nm QCW Laser Diode Unmounted Bar

Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output
  • Unmounted single emitters up to 2W CW Power
  • Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm

Parameters(25℃)

Parameter Unit LDAQ1-0808-0100
Optical Parameter Operation Mode - QCW
Output Power Po W 100
Center Wavelength λc nm 808 ± 5
Geometrical Fill Factor - 87%
Number of Unmounted Single Emitters - 100
Electrical Parameter Slope Efficiency Es W/A ≥1.2
Threshold Current Ith A ≤20
Operating Current If A ≤100
Operating Voltage Vf V ≤3

Notice

1. Item notice: LDAQ1( item model)-****( center wavelength)-****( output power).

2. Data sheet is based on the result of testing under 25℃,pulse width 200μs, frequency 1-100Hz, maximum duty cycle 2%, and typical application 0.4%.

3. Data sheet is based on the CS package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

Product tags

808nm laser diode bar

,

high power laser diode bar

,

pcb laser depaneling
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808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars

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Product Detail
Brand Name :
HTOE
Model Number :
LDAQ1-0808-0100
Place of Origin :
Beijing, China
MOQ :
50 pcs
Price :
Negotiable
Payment Terms :
T/T
Contact Supplier
808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars

Hi-Tech Optoelectronics Co., Ltd

Active Member
7 Years
beijing, beijing
Since 1998
Business Type :
Manufacturer
Main Products :
Unmounted Laser Diode, TO Can Laser Diode, Single Emitter Diode Laser
Total Annual :
3500000-4500000
Employee Number :
100~200
Certification Level :
Active Member
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