300mW Output Power 670nm Wavelength Packaged Single Emitter Diode Laser
As one of HTOE LDM series packaged single emitters, LDM-0670-300m-*3 is Fabry-Perot cavity semiconductor laser diode based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands
A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.
Features
Parameters(20℃)
C-Mount/ TOØ3 Packaged Single Emitter | |||||
---|---|---|---|---|---|
Item | Parameter | Unit | LDM-0670-300m-*3 | ||
Min. | Typical | Max. | |||
Optical Parameter | Output power | mW | - | 300 | - |
Lasing Wavelength | nm | 660 | 670 | 680 | |
Spectral Width | nm | - | 1.0 | 2.0 | |
Emitting Area width | µm | - | 100 | - | |
Temperature Coefficient | nm/℃ | - | 0.30 | - | |
Fast Axis Divergence | deg | - | 34 | 38 | |
Slow Axis Divergence | deg | - | 7 | 10 | |
Electrical Parameter | Slope Efficiency | W/A | 0.90 | - | - |
Threshold Current | A | - | 0.50 | 0.60 | |
Operating Current | A | - | 0.80 | 1.00 | |
Operating Voltage | V | - | 2.00 | 2.30 | |
Others | Package | - | C-Mount/TOØ3 | ||
Operating Temperature | ℃ | 10 ~ 30 | |||
Storage Temperature | ℃ | -10 ~ 60 |
Package Information
C-Mount Package
TOØ3 Package
Function Curve
P-I-V Curve Spectral Curve
Notice
Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.
Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.
The exceed power output will speed up the aging of the LD.