Specifications
Brand Name :
HTOE
Model Number :
LDM-0670-300m-*3
Place of Origin :
Beijing, China
MOQ :
50 pcs
Price :
Negotiable
Payment Terms :
T/T
Supply Ability :
1000 pcs per month
Delivery Time :
10-20 working days
Packaging Details :
Paper Box
Output power :
300 mWatt
Lasing Wavelength :
670±10 nm
Operating Current :
≤1 A
Operating Voltage :
≤2.3 V
Package :
C-Mount/TOØ3
Threshold Current :
≤0.6 A
Description

300mW Output Power 670nm Wavelength Packaged Single Emitter Diode Laser

As one of HTOE LDM series packaged single emitters, LDM-0670-300m-*3 is Fabry-Perot cavity semiconductor laser diode based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands

A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.

Features

  • 300m watt output power
  • 670nm center wavelength
  • Beam shaping services
  • C-mount and 3mm in TO package options
  • High electro-optical effiency
  • High reliablity

Parameters(20℃)

C-Mount/ TOØ3 Packaged Single Emitter
Item Parameter Unit LDM-0670-300m-*3
Min. Typical Max.
Optical Parameter Output power mW - 300 -
Lasing Wavelength nm 660 670 680
Spectral Width nm - 1.0 2.0
Emitting Area width µm - 100 -
Temperature Coefficient nm/℃ - 0.30 -
Fast Axis Divergence deg - 34 38
Slow Axis Divergence deg - 7 10
Electrical Parameter Slope Efficiency W/A 0.90 - -
Threshold Current A - 0.50 0.60
Operating Current A - 0.80 1.00
Operating Voltage V - 2.00 2.30
Others Package - C-Mount/TOØ3
Operating Temperature 10 ~ 30
Storage Temperature -10 ~ 60

Package Information

670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

C-Mount Package

670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

TOØ3 Package

Function Curve

670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

P-I-V Curve Spectral Curve

Notice

  1. Item model notice: LDM (Item model), 0670 (Center wavelength), 300m (Output power), *3 (Heat sink structure and item width).
  2. Data in the sheet are all based on C-mount package heat sink testing.
  3. Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.

  4. Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.

  5. The exceed power output will speed up the aging of the LD.

  6. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

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670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

Ask Latest Price
Brand Name :
HTOE
Model Number :
LDM-0670-300m-*3
Place of Origin :
Beijing, China
MOQ :
50 pcs
Price :
Negotiable
Payment Terms :
T/T
Contact Supplier
670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

Hi-Tech Optoelectronics Co., Ltd

Active Member
7 Years
beijing, beijing
Since 1998
Business Type :
Manufacturer
Total Annual :
3500000-4500000
Employee Number :
100~200
Certification Level :
Active Member
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