Integrated Circuit Chip IC Brand New Original Unused
ISO9001.pdf
Application: This device is commonly used in power switches, power switches, and other circuits that require high-power amplification.
Conclusion: This device is a P-channel MOSFET with low on-resistance, high current carrying capacity, and good withstand voltage characteristics, suitable for high-power applications.
Parameters:
Vds: The maximum drain source voltage is -40V
Id: The maximum drain current is 90A
Rds (on): conduction resistance less than 5m Ω
Gate drive voltage: Normal operating voltage range is 0-20V
The TO-252 packaging form is convenient for installation and layout.
Product Technical Specifications | | | | EU RoHS | Compliant with Exemption聽 | ECCN (US) | EAR99 | Part Status | Obsolete | HTS | 8541.29.00.95 | SVHC | Yes | SVHC Exceeds Threshold | Yes | Automotive | Yes | PPAP | Unknown | Product Category | Power MOSFET | Configuration | Single | Process Technology | OptiMOS P2 | Channel Mode | Enhancement | Channel Type | P | Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 40 | Maximum Gate Source Voltage (V) | 卤20 | Maximum Gate Threshold Voltage (V) | 4 | Maximum Continuous Drain Current (A) | 90 | Maximum Gate Source Leakage Current (nA) | 100 | Maximum IDSS (uA) | 1 | Maximum Drain Source Resistance (mOhm) | 4.7@10V | Typical Gate Charge @ Vgs (nC) | 118@10V | Typical Gate Charge @ 10V (nC) | 118 | Typical Input Capacitance @ Vds (pF) | 7900@25V | Maximum Power Dissipation (mW) | 125000 | Typical Fall Time (ns) | 65 | Typical Rise Time (ns) | 24 | Typical Turn-Off Delay Time (ns) | 73 | Typical Turn-On Delay Time (ns) | 42 | Minimum Operating Temperature (掳C) | -55 | Maximum Operating Temperature (掳C) | 175 | Supplier Temperature Grade | Automotive | Packaging | Tape and Reel | Mounting | Surface Mount | Package Height | 2.3 | Package Width | 6.22 | Package Length | 6.5 | PCB changed | 2 | Tab | Tab | Standard Package Name | TO-252 | Supplier Package | DPAK | Pin Count | 3 | | | | | | |