ISO9001.pdf
IPD50P04P4L is a P-channel MOSFET transistor mainly used in fields such as power switches, DC DC converters, and power control. The following are some important parameters and packaging information for IPD50P04P4L:
Parameters:
Rated voltage: 40V
Maximum drain current: 50A
Power current: 4A
Static resistance: 12m Ω
Gate charge: 62nC
Packaging:
TO-252 (DPAK) Packaging
Conclusion:
IPD50P04P4L is a high voltage, high current, and low static resistance P-channel MOSFET transistor that can be widely used in power switches, DC DC converters, and power control fields. It has the characteristics of high efficiency, stability, and reliability.
Product Technical Specifications | | | | EU RoHS | Compliant with Exemption | ECCN (US) | EAR99 | Part Status | Obsolete | HTS | 8541.29.00.95 | SVHC | Yes | SVHC Exceeds Threshold | Yes | Automotive | Yes | PPAP | Unknown | Product Category | Power MOSFET | Configuration | Single | Process Technology | OptiMOS P2 | Channel Mode | Enhancement | Channel Type | P | Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 40 | Maximum Gate Source Voltage (V) | 16 | Maximum Gate Threshold Voltage (V) | 2.2 | Operating Junction Temperature (°C) | -55 to 175 | Maximum Continuous Drain Current (A) | 50 | Maximum Drain Source Resistance (mOhm) | 10.6@10V | Typical Gate Charge @ Vgs (nC) | 45@10V | Typical Gate Charge @ 10V (nC) | 45 | Typical Input Capacitance @ Vds (pF) | 3000@25V | Maximum Power Dissipation (mW) | 58000 | Typical Fall Time (ns) | 39 | Typical Rise Time (ns) | 9 | Typical Turn-Off Delay Time (ns) | 46 | Typical Turn-On Delay Time (ns) | 12 | Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 175 | Supplier Temperature Grade | Automotive | Packaging | Tape and Reel | Mounting | Surface Mount | Package Height | 2.3 | Package Width | 6.22 | Package Length | 6.5 | PCB changed | 2 | Tab | Tab | Standard Package Name | TO-252 | Supplier Package | DPAK | Pin Count | 3 | | |