ISO9001.pdf
IPD075N03LG is an N-channel MOSFET transistor. The following are the applications, conclusions, and parameters of this transistor:
Application:
Power switch and DC-DC converter
Motor driver
Automotive electronic equipment
Industrial automation control system
Conclusion:
Efficient N-channel MOSFET transistor
Low conduction resistance and leakage current
High temperature working ability
Low reverse leakage current
Parameters:
VDS (maximum drain source voltage): 30 V
ID (maximum drain current): 75 A
RDS (on): 5.5 m Ω
Qg (total gate charge): 180 nC
VGS (maximum gate source voltage): ± 20 V
Ciss (input capacitance): 3550 pF
Coss (output capacitance): 1120 pF
Crss (feedback capacitance): 180 pF
Tj (junction temperature): -55 to 175 ° C
Package: TO-252-3
Product Technical Specifications | | | | EU RoHS | Compliant with Exemption | ECCN (US) | EAR99 | Part Status | Active | HTS | 8541.29.00.95 | SVHC | Yes | SVHC Exceeds Threshold | Yes | Automotive | No | PPAP | No | Product Category | Power MOSFET | Configuration | Single | Process Technology | OptiMOS | Channel Mode | Enhancement | Channel Type | N | Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 30 | Maximum Gate Source Voltage (V) | ±20 | Maximum Gate Threshold Voltage (V) | 2.2 | Maximum Continuous Drain Current (A) | 50 | Maximum Drain Source Resistance (mOhm) | 7.5@10V | Typical Gate Charge @ Vgs (nC) | 8.7@4.5V|18@10V | Typical Gate Charge @ 10V (nC) | 18 | Typical Input Capacitance @ Vds (pF) | 1400@15V | Maximum Power Dissipation (mW) | 47000 | Typical Fall Time (ns) | 2.8 | Typical Rise Time (ns) | 3.6 | Typical Turn-Off Delay Time (ns) | 17 | Typical Turn-On Delay Time (ns) | 4.3 | Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 175 | Packaging | Tape and Reel | Mounting | Surface Mount | Package Height | 2.3 | Package Width | 6.22 | Package Length | 6.5 | PCB changed | 2 | Tab | Tab | Standard Package Name | TO-252 | Supplier Package | DPAK | Pin Count | 3 | | | | | | |