Specifications
Brand Name :
TOSHIBA
Model Number :
GT20J101
Place of Origin :
CHINA
MOQ :
10 PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union , ESCROW
Supply Ability :
10000PCS
Delivery Time :
STOCK
Packaging Details :
TUBE
VCES :
600V
VGES :
+-20
IC :
20A
ICP :
40A
PC :
130W
Tj :
150°C
Description

GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications

• The 3rd Generation • Enhancement-Mode

• High Speed: tf = 0.30 µs (max)

• Low Saturation Voltage: VCE (sat) = 2.7 V (max)

Characteristic Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES +-20 V
Collector current DC IC 20 A
Collector current 1 ms ICP 40 A
Collector power dissipation (Tc = 25°C) PC 130 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55~150 °C

GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-755-82539981

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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

Ask Latest Price
Brand Name :
TOSHIBA
Model Number :
GT20J101
Place of Origin :
CHINA
MOQ :
10 PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union , ESCROW
Contact Supplier
GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

DELI ELECTRONICS TECHNOLOGY CO.,LTD

Active Member
7 Years
guangdong, shenzhen
Since 2005
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Exporter, Trading Company
Total Annual :
100000 -500000
Employee Number :
5~10
Certification Level :
Active Member
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