GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
• The 3rd Generation • Enhancement-Mode
• High Speed: tf = 0.30 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Characteristic | Symbol | Rating | Unit |
Collector-emitter voltage | VCES | 600 | V |
Gate-emitter voltage | VGES | +-20 | V |
Collector current DC | IC | 20 | A |
Collector current 1 ms | ICP | 40 | A |
Collector power dissipation (Tc = 25°C) | PC | 130 | W |
Junction temperature | Tj | 150 | °C |
Storage temperature range | Tstg | −55~150 | °C |
Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-755-82539981