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2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
Specifications
Brand Name :
FUJI
Model Number :
2MBI100N-060
Place of Origin :
JAPAN
MOQ :
1 PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union ， ESCROW
Supply Ability :
500PCS
Delivery Time :
STOCK
Packaging Details :
BOX
Collector-Emitter Voltage :
600V
Gate -Emitter Voltage :
± 20V
Continuous :
100A
1ms :
200A
Max. Power Dissipation :
400W
Operating Temperature :
+150°C
Storage Temperature :
-40--125°C
Isolation Voltage :
2500v
Description

2MBI100N-060 IGBT Power Module 2-PACK IGBT 600V 100A

IGBT MODULE ( N series )

n
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (
~3 Times Rated Current)
n
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

Description 1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form
2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
3. All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly.
Feature 1). Square RBSOA
2). Low Saturation Voltage
3). Overcurrent Limiting Function (~3 Times Rated Current)
4). IGBT is three-terminal power semiconductor device
5). High Frequency Operation
Application 1). AC Drive inverter
2). Servo control
3). UPS, Uninterruptible Power Supply
4). Welding Power Supplies

n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 600V
Gate -Emitter Voltage VGES ± 20V
Continuous IC 100
Collector 1ms
IC PULSE 200
Current Continuous -IC 100 1ms
-IC PULSE 200
Max. Power Dissipation PC 400W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40∼ +125°C
Isolation VoltageA.C. 1min.Vis 2500V
Mounting *13.5
Terminals *13.5
Note: *1:Recommendable Value; 2.5∼ 3.5 Nm (M

2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
Website:www.deli-ic.com
TEL:86-0755-82539981

Product tags

igbt power module 100a 600v

,

high power igbt module

,

power module igbt
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2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

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Product Detail
Brand Name :
FUJI
Model Number :
2MBI100N-060
Place of Origin :
JAPAN
MOQ :
1 PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union ， ESCROW
Contact Supplier
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

DELI ELECTRONICS TECHNOLOGY CO.,LTD

Active Member
7 Years
guangdong, shenzhen
Since 2005
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Exporter, Trading Company
Main Products :
IC Memory Chip, Integrated Circuit Chip, Computer IC Chip
Total Annual :
100000 -500000
Employee Number :
5~10
Certification Level :
Active Member
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