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FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F
FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F
FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F
FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F
Specifications
Brand Name :
FSC
Model Number :
FDPF10N60NZ
Place of Origin :
CHINA
MOQ :
10 pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union ， ESCROW
Supply Ability :
10000pcs
Delivery Time :
STOCK
Packaging Details :
TUBE
Category :
Power MOSFET
Maximum Drain Source Voltage (V) :
600V
Maximum Gate Source Voltage (V) :
±25V
Maximum Gate Threshold Voltage (V) :
5V
Maximum Continuous Drain Current (A) :
10A
Maximum Gate Source Leakage Current (nA) :
10000NA
Maximum Drain Source Resistance (mOhm) :
750@10V
Typical Gate Charge @ Vgs (nC) :
23@10V
Description

FDPF10N60NZ NPN PNP Transistors N-Channel 600V 10A (Tc) 38W (Tc) Through Hole TO-220F

N-Channel MOSFET 600V, 10A, 0.75
Features
•RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A
• Low Gate Charge ( Typ. 23nC)
• Low Crss ( Typ. 10pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant

Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction

EU RoHS
 Compliant with Exemption
ECCN (US) EAR99
Product Category Power MOSFET
Configuration Single
Process Technology UniFET II
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±25
Maximum Gate Threshold Voltage (V) 5
Maximum Continuous Drain Current (A) 10
Maximum Gate Source Leakage Current (nA) 10000
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 750@10V
Typical Gate Charge @ Vgs (nC) 23@10V
Typical Gate Charge @ 10V (nC) 23
Typical Input Capacitance @ Vds (pF) 1110@25V
Maximum Power Dissipation (mW) 38000
Typical Fall Time (ns) 50
Typical Rise Time (ns) 50
Typical Turn-Off Delay Time (ns) 70
Typical Turn-On Delay Time (ns) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tube
Supplier Package TO-220FP
Standard Package Name TO-220
Pin Count 3
Mounting Through Hole
Package Height 15.87
Package Length 10.16
Package Width 4.7
PCB changed 3
Tab Tab
Lead Shape Through Hole

FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981

Product tags

n channel mosfet transistor

,

snubber circuit for igbt

,

pnp bipolar transistor
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FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

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Product Detail
Brand Name :
FSC
Model Number :
FDPF10N60NZ
Place of Origin :
CHINA
MOQ :
10 pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union ， ESCROW
Contact Supplier
FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F
FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F

DELI ELECTRONICS TECHNOLOGY CO.,LTD

Active Member
7 Years
guangdong, shenzhen
Since 2005
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Exporter, Trading Company
Main Products :
IC Memory Chip, Integrated Circuit Chip, Computer IC Chip
Total Annual :
100000 -500000
Employee Number :
5~10
Certification Level :
Active Member
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