Specifications
Brand Name :
IR
Model Number :
IRF640N
Place of Origin :
CHINA
MOQ :
10 PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union , ESCROW
Supply Ability :
10000PCS
Delivery Time :
STOCK
Packaging Details :
TUBE
Categories :
Transistors - FETs, MOSFETs - Single
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
67nC @ 10V
Description

IRF640N General Purpose Rectifier Diode N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-220AB

 Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
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Product Attributes Select All
Categories Discrete Semiconductor Products
  Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220ABIRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB

Deli electronics tehcnology co ltd
www.icmemorychip.com

Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981

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IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB

Ask Latest Price
Brand Name :
IR
Model Number :
IRF640N
Place of Origin :
CHINA
MOQ :
10 PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union , ESCROW
Contact Supplier
IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB
IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB
IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB
IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB

DELI ELECTRONICS TECHNOLOGY CO.,LTD

Active Member
7 Years
guangdong, shenzhen
Since 2005
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Exporter, Trading Company
Total Annual :
100000 -500000
Employee Number :
5~10
Certification Level :
Active Member
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