2CL3512H 350mA 12kV High Voltage Silicon Diodes for Micro - wave oven
2CL4512H etc.
MAXIMUM RATINGS AND CHARACTERISTICS: Ta=25°C (Absolute Maximum Ratings)
Repetitive Peak Renerse Voltage : 12 KV
Average Forward Current Maximum:350 mA
Non-Repetitive Forward Surge Current:30A
Reverse surge current:100mA
Junction Temperature:130°C
Allowable Operation Case Temperature:-40~+130°C
Storage Temperature: -40~+130°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless Otherwise Specified)
Maximum Forward Voltage Drop:12V
Maximum Reverse Current:5 uA
Maximum Reverse Recovery Time:5-50 nS
Reverse Breakdown Voltage:12.5 KV
INTRODUCE:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High overload surge capability.
2. High Current,Low Forward Voltage.
3. Avalanche Characteristic.
4. Conform to RoHS and SGS.
5. Epoxy resin molded in vacuumHave anticorrosion in the surface.
APPLICATIONS:
1. High voltage power supply rectifier.
2. High voltage rectifier circuit for microwave oven.
3. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.50 grams (approx).
Deli electronics tehcnology Co.,Ltd.
Email:sales3@deli-ic.com
Skype:hkdeli881
Contact: VIVI-CHEN