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GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Specifications
Brand Name :
TOSHIBA
Model Number :
GT20J301
Certification :
CE/ RoHS
Place of Origin :
JAPAN
MOQ :
10pcs
Price :
To be negotiated
Payment Terms :
T/T, Western Union ,paypal
Supply Ability :
10,000PCS
Delivery Time :
in stock 2-3days
Packaging Details :
Reel
PN :
GT20J301
Brand :
TOSHIBA
Original :
JAPAN
Type :
Transistor Silicon N Channel IGBT
Voltage :
2.7V (Max.)
Material :
Original
Description

GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba

Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS


●The 3rd Generation
●Enhancement-Mode
●High Speed. : tf=0.30pμs (Max.)
●Low Saturation Voltage : VCE (sat)=2.7V (Max.)
●FRD included between Emitter and Collector

GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Deli electronics tehcnology Co.,Ltd
Email:sales3@deli-ic.com
Skype:hkdeli881
Contact: VIVI-CHEN

Product tags

channel igbt toshiba semiconductor

,

mosfet igbt

,

insulated gate bipolar transistor igbt
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GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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Product Detail
Brand Name :
TOSHIBA
Model Number :
GT20J301
Certification :
CE/ RoHS
Place of Origin :
JAPAN
MOQ :
10pcs
Price :
To be negotiated
Contact Supplier
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

DELI ELECTRONICS TECHNOLOGY CO.,LTD

Active Member
7 Years
guangdong, shenzhen
Since 2005
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Exporter, Trading Company
Main Products :
IC Memory Chip, Integrated Circuit Chip, Computer IC Chip
Total Annual :
100000 -500000
Employee Number :
5~10
Certification Level :
Active Member
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