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IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
Specifications
Brand Name :
Infineon Technologies
Model Number :
IMBG120R350M1HXTMA1
MOQ :
50pcs
Price :
Negotiable
Supply Ability :
1000000pcs
Drain to Source Voltage (Vdss) :
1200 V
Current - Continuous Drain (Id) @ 25°C :
4.7A (Tc)
Rds On (Max) @ Id, Vgs :
468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id :
5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.9 nC @ 18 V
Vgs (Max) :
+18V, -15V
Description

IMBG120R350M1HXTMA1 N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12

Infineon Technologies 1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

FEATURES

  • High current density
  • Best in class switching and conduction losses
  • Low inductive design
  • Low device capacitances
  • An intrinsic diode with reverse recovery charge
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • High efficiency for reduced cooling effort
  • Threshold-free on-state characteristics
  • Temperature independent switching losses
  • High-frequency operation
  • Increased power density
  • Optimized development cycle time and cost
  • RoHS compliant

SPECIFICATIONS

  • DF23MR12W1M1 and DF11MR12W1M1:
    • Booster configuration
    • Easy 1B configuration
    • M1 technology
    • 1200V voltage class
    • 62.8mm x 33.8mm dimensions
  • FF8MR12W2M1 and FF6MR12W2M1:
    • Dual configuration
    • Easy 2B housing
    • M1 technology
    • 1200V voltage class
    • 62.8mm x 48mm dimensions
  • F423MR12W1M1P:
    • FourPack configuration
    • Easy 1B configuration
    • M1 technology
    • 1200V voltage class
    • 62.8mm x 33.8mm dimensions
  • FF11MR12W1M1, FF45MR12W1M1, and FF23MR12W1M1:
    • Dual configuration
    • Easy 1B housing
    • M1 technology
    • 1200V voltage class
    • 62.8mm x 33.8mm dimensions
  • F3L11MR12W2M1:
    • 3-level configuration
    • Easy 2B configuration
    • M1 technology
    • 1200V voltage class
    • 42.5mm x 51mm dimensions
  • FS45MR12W1M1:
    • SixPACK configuration
    • Easy 1B housing
    • M1 technology
    • 1200V voltage class
    • 62.8mm x 33.8mm dimensions

ADDITIONAL RESOURCES

CIRCUIT DIAGRAMS

IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount

PERFORMANCE GRAPH

IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
Product tags

igbt gate driver ic

,

igbt driver circuit design

,

semiconductor igbt module mitsubishi
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IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount

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Product Detail
Brand Name :
Infineon Technologies
Model Number :
IMBG120R350M1HXTMA1
MOQ :
50pcs
Price :
Negotiable
Supply Ability :
1000000pcs
Drain to Source Voltage (Vdss) :
1200 V
Contact Supplier
IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount

HongKong Wei Ya Hua Electronic Technology Co.,Limited

Verified Supplier
3 Years
shenzhen
Since 2019
Business Type :
Distributor/Wholesaler
Main Products :
Integrated Circuits ICs, Programmable Logic ICs, Zener Diode IC
Total Annual :
3000000-5000000
Employee Number :
10~50
Certification Level :
Verified Supplier
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