AT45DB641E-SHN2B-T Adesto Technologies NOR FLASH Memory IC Components

AT45DB641E-SHN2B-T IC FLASH Memory IC 64Mb (256 Bytes x 32K pages) SPI 85 MHz 8-SOIC

64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory

AT45DB641E-MHN2B-T IC FLASH 64MBIT SPI 85MHZ 8UDFN

NOR Flash 64 Mbit, Wide Vcc (1.7V to 3.6V), -40C to 85C, 512 Byte Binary Page Mode, DFN 5x6 (Tape & Reel), Single SPI DataFlash

AT45DB641E Description :

The AT45DB641E is a 1.7V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB641E also supports the RapidS serial interface for applications requiring very high speed operation. Its 69,206,016 bits of memory are organized as 32,768 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB641E also contains two SRAM buffers of 256/264 bytes each. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash® uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential.To allow for simple in-system re-programmability, the AT45DB641E does not require high input voltages for programming. The device operates from a single 1.7V to 3.6V power supply for the erase and program and read operations. The AT45DB641E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock

Features:

Single 1.7V - 3.6V supply

Serial Peripheral Interface (SPI) compatibleSupports SPI modes 0 and 3

Supports RapidS™ operation

Continuous read capability through entire array

Up to 85MHzLow-power read option up to 15MHz

Clock-to-output time (tV) of 8ns maximum

User configurable page size

256 bytes per page

264 bytes per page (default)

Page size can be factory pre-configured for 256 bytes

Two fully independent SRAM data buffers (256/264 bytes)

Allows receiving data while reprogramming the main memory array

Flexible programming options

Byte/Page Program (1 to 256/264 bytes) directly into main memory

Buffer Write | Buffer to Main Memory Page Program

Flexible erase optionsPage Erase (256/264 bytes)

Block Erase (2KB)Sector Erase (256KB)Chip Erase (64-Mbits)

Program and Erase Suspend/Resume

Advanced hardware and software data protection features

Individual sector protectionIndividual sector lockdown to make any sector permanently read-only

128-byte, One-Time Programmable (OTP) Security Register

64 bytes factory programmed with a unique identifier

64 bytes user programmableHardware and software controlled reset options

JEDEC Standard Manufacturer and Device ID Read

Low-power dissipation

400nA Ultra-Deep Power-Down current (typical)

5µA Deep Power-Down current (typical)

25µA Standby current (typical)

7mA Active Read current (typical)

Endurance: 100,000 program/erase cycles per page minimum

Data retention: 20 years

Complies with full industrial temperature range

Green (Pb/Halide-free/RoHS compliant) packaging options

8-lead SOIC (0.208" wide)8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

8-pad Very-thin DFN (6 x 8 x 1.0mm)

44-ball dBGA (6 x 8 modified ball array)

Adesto Technologies NOR FLASH Memory Integrated circuit IC Specification :

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