Specifications
Brand Name :
Infineon
Model Number :
BSC070N10NS3GATMA1
Certification :
ROHS
Place of Origin :
Malaysia
MOQ :
1pieces
Price :
Negotiated
Payment Terms :
T/T, Western Union
Supply Ability :
5000PCS
Delivery Time :
5 working days
Packaging Details :
REEL
Details :
N-Channel 100 V 90A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1
Products Name :
Integrated circuits(IC)
Category :
Electronic Components
IC Family :
Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Other Name :
BSC070
Package :
TDSON8
Description :
MOSFET N-CH 100V 90A TDSON-8
Lead free status :
RoHS Compliant, PB Free, Lead Free
Stock :
In Stock
Description

07N10NS BSC070N10NS3GATMA1 Infineon's OptiMOS power MOSFET N-Channel 100 V 90A 114W PG-TDSON-8 IC

Description:

Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS.

Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

Potential Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)

Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2

Benefits

Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

Specifications:

Category
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Base Product Number
BSC070
Parametrics BSC070N10NS3G
Ciss 3000 pF
Coss 520 pF
ID (@25°C) max 90 A
IDpuls max 360 A
Operating Temperature min max -55 °C 150 °C
Ptot max 114 W
Package SuperSO8 5x6
Polarity N
QG (typ @10V) 42 nC
RDS (on) (@10V) max 7 mΩ
Rth 1.1 K/W
VDS max 100 V
VGS(th) min max 2.7 V 2 V 3.5 V

BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

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BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

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Brand Name :
Infineon
Model Number :
BSC070N10NS3GATMA1
Certification :
ROHS
Place of Origin :
Malaysia
MOQ :
1pieces
Price :
Negotiated
Contact Supplier
BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC
BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

Angel Technology Electronics Co

Verified Supplier
4 Years
hongkong, shenzhen
Since 2006
Business Type :
Manufacturer, Distributor/Wholesaler, Agent
Total Annual :
80 millions-500 millions
Employee Number :
20~200
Certification Level :
Verified Supplier
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