07N10NS BSC070N10NS3GATMA1 Infineon's OptiMOS power MOSFET N-Channel 100 V 90A 114W PG-TDSON-8 IC
Description:
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS.
Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Potential Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Specifications:
Category | |
Transistors - FETs, MOSFETs - Single | |
Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 7mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 75µA |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 114W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8-1 |
Package / Case | 8-PowerTDFN |
Base Product Number | BSC070 |
Parametrics | BSC070N10NS3G |
Ciss | 3000 pF |
Coss | 520 pF |
ID (@25°C) max | 90 A |
IDpuls max | 360 A |
Operating Temperature min max | -55 °C 150 °C |
Ptot max | 114 W |
Package | SuperSO8 5x6 |
Polarity | N |
QG (typ @10V) | 42 nC |
RDS (on) (@10V) max | 7 mΩ |
Rth | 1.1 K/W |
VDS max | 100 V |
VGS(th) min max | 2.7 V 2 V 3.5 V |