STW26NM60N

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	165 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Series:	STW26NM60N
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	50 ns
Height:	20.15 mm
Length:	15.75 mm
Product Type:	MOSFET
Rise Time:	25 ns
	600
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel Power MOSFET
Type:	Power MOSFET
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	13 ns
Width:	5.15 mm
Unit Weight:	0.211644 oz

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