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MC33202DR2G onsemi
MC33202DR2G onsemi
Specifications
Description :
MC33202DR2G onsemi SOIC-8
Description

Here is a suggested product introduction for the ON Semiconductor MC33202DR2G Power MOSFET:

MC33202DR2G

The MC33202DR2G extends ultra-high current performance to ON Semiconductor's compact PowerDI-6 package. As a 200A N-channel MOSFET optimized for power circuits with high density demands, it maximizes current in confined spaces.

Key Features:

  • 40V voltage rating
  • 200A continuous current capability
  • 70mΩ typical RDS(on)
  • PowerDI-6 ultrasmall package
  • Low 3°C/WθJA thermal resistance
  • -55°C to 150°C operating temperature range
  • Optimized for solar inverters, welding equipment and EV chargers
  • Outstanding current density in a tiny footprint

PowerDI-6's miniature density enables industry-leading current in absolutely confined layout areas.

Thermal performance exceeds expectations given the most restrictive available package size.

Reliable operation facilitates stringent automotive/industrial applications.

Simply provides the ultimate power handling performance within the most constrained footprints.

Ideal for maximizing circuit integration where space is strictly "zero tolerance".

Enables cutting-edge system power output levels from the smallest PCB real estate.

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MC33202DR2G onsemi

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Product Detail
Description :
MC33202DR2G onsemi SOIC-8
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MC33202DR2G onsemi

ZhongHao Industry Limited

Verified Supplier
2 Years
shenzhen
Business Type :
Manufacturer, Seller
Main Products :
Microchip Technology Ic, Onsemi Ic, Renesas Ic
Certification Level :
Verified Supplier
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